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    IXTH02N250 Search Results

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    IXTH02N250 Price and Stock

    Littelfuse Inc IXTH02N250

    MOSFET N-CH 2500V 200MA TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH02N250 Tube 1,682 1
    • 1 $17.68
    • 10 $17.68
    • 100 $14.31633
    • 1000 $12.21086
    • 10000 $12.21086
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    Verical IXTH02N250 300 6
    • 1 -
    • 10 $14.9771
    • 100 $13.2274
    • 1000 $12.8171
    • 10000 $12.8171
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    IXTH02N250 276 5
    • 1 -
    • 10 $15.7519
    • 100 $14.6509
    • 1000 $14.3778
    • 10000 $14.3778
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    Newark IXTH02N250 Bulk 300 1
    • 1 $9.81
    • 10 $9.81
    • 100 $9.81
    • 1000 $9.81
    • 10000 $9.81
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    IXTH02N250 Bulk 1
    • 1 $17.68
    • 10 $16.25
    • 100 $13.72
    • 1000 $12.21
    • 10000 $12.21
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    Quest Components IXTH02N250 220
    • 1 $24.44
    • 10 $24.44
    • 100 $19.552
    • 1000 $19.552
    • 10000 $19.552
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    CoreStaff Co Ltd IXTH02N250 276
    • 1 $17.395
    • 10 $12.22
    • 100 $12.22
    • 1000 $12.22
    • 10000 $12.22
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    IXYS Corporation IXTH02N250

    MOSFETs High Voltage Power MOSFET; 2500V, 0.2A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH02N250 119
    • 1 $17.58
    • 10 $17.24
    • 100 $14.31
    • 1000 $12.21
    • 10000 $12.21
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    Newark IXTH02N250 Bulk 1
    • 1 $25.49
    • 10 $22.85
    • 100 $19.63
    • 1000 $19.63
    • 10000 $19.63
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    Future Electronics IXTH02N250 Tube 47 Weeks 300
    • 1 -
    • 10 -
    • 100 $12.9
    • 1000 $12.67
    • 10000 $12.67
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    Quest Components IXTH02N250 4
    • 1 $29.328
    • 10 $29.328
    • 100 $29.328
    • 1000 $29.328
    • 10000 $29.328
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    TTI IXTH02N250 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $12.09
    • 10000 $12.09
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    TME IXTH02N250 1
    • 1 $16.74
    • 10 $13.74
    • 100 $13.28
    • 1000 $12.19
    • 10000 $12.19
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    IXYS Integrated Circuits Division IXTH02N250

    MOSFET DIS.200mA 2500V N-CH TO247-3 ENHANCEMENT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXTH02N250
    • 1 $18.53818
    • 10 $18.53818
    • 100 $17.3254
    • 1000 $17.3254
    • 10000 $17.3254
    		Get Quote

    IXTH02N250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTH02N250 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 2500V 200MA TO247 Original PDF

    IXTH02N250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTH02N250

    Abstract: IXTV02N250S PLUS220SMD
    Text: Advance Technical Information IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH02N250 IXTV02N250S 200mA O-247 100mA 02N250 9-09-A IXTH02N250 IXTV02N250S PLUS220SMD

    IXTA02N250

    Abstract: No abstract text available
    Text: IXTA02N250 IXTH02N250 IXTV02N250S High Voltage Power MOSFETs VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA02N250 IXTH02N250 IXTV02N250S 200mA O-263 O-247 PLUS220SMD O-247) PLUS220 O-263)

    IXTH02N250

    Abstract: IXTV02N250S PLUS220SMD DS100187B 02N250
    Text: IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH02N250 IXTV02N250S 200mA O-247 100ms 02N250 10-20-10-B IXTH02N250 IXTV02N250S PLUS220SMD DS100187B

    DS100187A

    Abstract: IXTV02N250S IXTH02N250 PLUS220SMD 02N250
    Text: Preliminary Technical Information IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V


    Original     		PDF IXTH02N250 IXTV02N250S 200mA O-247 100ms 02N250 10-20-10-B DS100187A IXTV02N250S IXTH02N250 PLUS220SMD

    IXTA02N250

    Abstract: No abstract text available
    Text: High Voltage Power MOSFETs IXTA02N250 IXTH02N250 IXTV02N250S VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA02N250 IXTH02N250 IXTV02N250S 200mA O-263 IXTA02N250 100ms

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250