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    IXTQ52N30P Search Results

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    IXTQ52N30P Price and Stock

    Littelfuse Inc IXTQ52N30P

    MOSFET N-CH 300V 52A TO3P
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    DigiKey IXTQ52N30P Tube 300
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    • 1000 $3.59083
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    Verical IXTQ52N30P 300 14
    • 1 -
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    • 100 $5.287
    • 1000 $5.1266
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    Quest Components IXTQ52N30P 240
    • 1 $11.325
    • 10 $11.325
    • 100 $6.9838
    • 1000 $6.2288
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    CoreStaff Co Ltd IXTQ52N30P 300
    • 1 $10.123
    • 10 $4.313
    • 100 $3.775
    • 1000 $3.775
    • 10000 $3.775
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    IXYS Corporation IXTQ52N30P

    MOSFETs 52 Amps 300V 0.066 Ohm Rds
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    Mouser Electronics IXTQ52N30P 598
    • 1 $7.13
    • 10 $6.53
    • 100 $5.55
    • 1000 $3.67
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    Newark IXTQ52N30P Bulk 1
    • 1 $4.95
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    • 100 $4.95
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    Future Electronics IXTQ52N30P Tube 24 Weeks 300
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    TTI IXTQ52N30P Tube 300
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    TME IXTQ52N30P 216 1
    • 1 $6.54
    • 10 $5.46
    • 100 $5.09
    • 1000 $4.17
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    New Advantage Corporation IXTQ52N30P 43 1
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    • 100 $8.58
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    IXYS Integrated Circuits Division IXTQ52N30P

    MOSFET DIS.52A 300V N-CH TO3P POLAR THT
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    Ozdisan Elektronik IXTQ52N30P 54
    • 1 $7.07762
    • 10 $7.07762
    • 100 $6.4342
    • 1000 $6.4342
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    IXTQ52N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ52N30P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF

    IXTQ52N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    52n30p

    Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30
    Text: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300


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    PDF IXTQ52N30P IXTT52N30P 52N30P 52n30p IXTT52N30P IXTQ52N30P 1M300 52N30

    52N30P

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM


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    PDF IXTQ52N30P IXTT52N30P O-268 52N30P 52N30P

    ixtq52n30p

    Abstract: IXTT52N30P
    Text: PolarTM Power MOSFETs IXTT52N30P IXTQ52N30P VDSS ID25 RDS on = 300V = 52A   73m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M


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    PDF IXTT52N30P IXTQ52N30P O-268 52N30P ixtq52n30p IXTT52N30P

    Untitled

    Abstract: No abstract text available
    Text: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V


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    PDF IXTQ52N30P IXTT52N30P O-268 52N30P

    52n30p

    Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P
    Text: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS Continuous


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    PDF IXTQ52N30P IXTT52N30P O-268 52N30P 52n30p mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P