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    IXTQ52N30P Search Results

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    IXTQ52N30P Price and Stock

    Littelfuse Inc IXTQ52N30P

    MOSFET N-CH 300V 52A TO3P
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    DigiKey IXTQ52N30P Tube 300
    • 1 -
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    • 1000 $3.49887
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    Verical IXTQ52N30P 300 13
    • 1 -
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    • 100 $5.4383
    • 1000 $5.2733
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    Quest Components IXTQ52N30P 240
    • 1 $11.325
    • 10 $11.325
    • 100 $6.9838
    • 1000 $6.2288
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    CoreStaff Co Ltd IXTQ52N30P 300
    • 1 $10.123
    • 10 $4.313
    • 100 $3.775
    • 1000 $3.775
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    IXYS Corporation IXTQ52N30P

    MOSFETs 52 Amps 300V 0.066 Ohm Rds
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    Mouser Electronics IXTQ52N30P 588
    • 1 $5.6
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    • 100 $4.83
    • 1000 $3.5
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    Newark IXTQ52N30P Bulk 297 1
    • 1 $4.68
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    Future Electronics IXTQ52N30P Tube 24 Weeks 300
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    TME IXTQ52N30P 206 1
    • 1 $6.02
    • 10 $5.02
    • 100 $4.68
    • 1000 $3.83
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    New Advantage Corporation IXTQ52N30P 43 1
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    • 100 $7.9
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    IXTQ52N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTQ52N30P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF

    IXTQ52N30P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    52n30p

    Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30
    Text: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300


    Original     		IXTQ52N30P IXTT52N30P 52N30P 52n30p IXTT52N30P IXTQ52N30P 1M300 52N30 PDF

    52N30P

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM


    Original     		IXTQ52N30P IXTT52N30P O-268 52N30P 52N30P PDF

    ixtq52n30p

    Abstract: IXTT52N30P
    Text: PolarTM Power MOSFETs IXTT52N30P IXTQ52N30P VDSS ID25 RDS on = 300V = 52A   73m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		IXTT52N30P IXTQ52N30P O-268 52N30P ixtq52n30p IXTT52N30P PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V


    Original     		IXTQ52N30P IXTT52N30P O-268 52N30P PDF

    52n30p

    Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P
    Text: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS Continuous


    Original     		IXTQ52N30P IXTT52N30P O-268 52N30P 52n30p mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P PDF