IXTP50N20P Search Results

IXTP50N20P Price and Stock

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Littelfuse Inc IXTP50N20P MOSFET N-CH 200V 50A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP50N20P	Tube	359		1	1 $4.98 10 $4.98 100 $3.3837 1000 $2.57534 10000 $2.42496	Buy Now
Littelfuse Inc IXTP50N20PM MOSFET N-CH 200V 20A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP50N20PM	Tube			300	1 - 10 - 100 - 1000 $5.8551 10000 $5.8551	Buy Now
IXYS Corporation IXTP50N20P MOSFET 50 Amps 200V 0.06 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP50N20P		268			1 $4.98 10 $4.19 100 $3.08 1000 $2.42 10000 $2.42	Buy Now
TTI	IXTP50N20P	Tube			300	1 - 10 - 100 - 1000 $2.33 10000 $2.33	Buy Now
TME	IXTP50N20P		225		1	1 $3.66 10 $2.91 100 $2.71 1000 $2.71 10000 $2.71	Buy Now
IXYS Corporation IXTP50N20PM MOSFET 20 Amps 200V 0.060 Ohm Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP50N20PM		72			1 $8.71 10 $7.68 100 $6.22 1000 $5.45 10000 $5.45	Buy Now
TME	IXTP50N20PM				1	1 $8.25 10 $6.56 100 $5.9 1000 $5.9 10000 $5.9	Get Quote

IXTP50N20P Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IXTP50N20P		IXYS	Discrete MOSFETs: Standard N-channel Types		Original	PDF
IXTP50N20PM		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 20A TO-220		Original	PDF

IXTP50N20P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ixtp50n20p Abstract: No abstract text available Text: PolarHTTM Power MOSFET VDSS ID25 IXTA50N20P IXTP50N20P IXTQ50N20P = = ≤ RDS on 200V 50A Ω 60mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTA50N20P IXTP50N20P IXTQ50N20P O-263 IXTA50N20P 50N20P 7-31-08-F ixtp50n20p
Untitled Abstract: No abstract text available Text: PolarHTTM Power MOSFET VDSS ID25 IXTP50N20PM RDS on (Electrically Isolated Tab) = = ≤ 200V 20A Ω 60mΩ N-Chlnnel Enhancement Mode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTP50N20PM O-220 50N20P 7-31-08-F
IXTP50N20PM Abstract: 50N20 50N20P ixtp50n20p Text: PolarHTTM Power MOSFET IXTP50N20PM VDSS ID25 RDS on (Electrically Isolated Tab) = = ≤ 200V 20A Ω 60mΩ N-Chlnnel Enhancement Mode OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTP50N20PM O-220 50N20P 7-31-08-F IXTP50N20PM 50N20 ixtp50n20p
IXTP50N20P Abstract: 50N-2 50N20P IXTA50N20P IXTQ50N20P 50n20 G4050 Text: PolarHTTM Power MOSFET IXTA50N20P IXTP50N20P IXTQ50N20P VDSS ID25 = = ≤ RDS on 200V 50A Ω 60mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 175°C Maximum Ratings 200 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ	Original	PDF	IXTA50N20P IXTP50N20P IXTQ50N20P O-263 IXTA50N20P 50N20P 7-31-08-F IXTP50N20P 50N-2 IXTQ50N20P 50n20 G4050
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p