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    IXYS Corporation IXTP18N60PM

    MOSFET N-CH 600V 9A TO220
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    IXTP18N60PM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTP18N60PM IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH TO-220 Original PDF

    IXTP18N60PM Datasheets Context Search

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    IXTP18N60PM

    Abstract: 18N60 85V6
    Text: VDSS ID25 IXTP18N60PM PolarTM Power MOSFET RDS on = 600V = 9A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTP18N60PM 18N60P 8-21-06-B IXTP18N60PM 18N60 85V6

    IXTP18N60PM

    Abstract: 18N60P
    Text: Preliminary Technical Information IXTP18N60PM PolarHVTM Power MOSFET VDSS ID25 RDS on = 600V = 9A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTP18N60PM O-220 18N60P 8-21-06-B IXTP18N60PM

    IXTP18N60PM

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTP18N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 9 A Ω ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF IXTP18N60PM O-220 IXTP18N60PM

    IXTP18N60PM

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTP18N60PM RDS on = 600V = 9A Ω ≤ 420mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol OVERMOLDED (IXTP.M) OUTLINE Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTP18N60PM 18N60P 8-21-06-B IXTP18N60PM

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250