IXTP06N120 Search Results

IXTP06N120 Price and Stock

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Littelfuse Inc IXTP06N120P MOSFET N-CH 1200V 600MA TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP06N120P	Tube			1	1 $4.92 10 $4.92 100 $4.92 1000 $2.23338 10000 $2.23338	Buy Now
Newark	IXTP06N120P	Bulk			300	1 - 10 - 100 $3.18 1000 $2.56 10000 $2.38	Buy Now
IXYS Corporation IXTP06N120P MOSFETs 0.6 Amps 1200V 32 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTP06N120P		190			1 $4.92 10 $3.74 100 $2.9 1000 $2.34 10000 $2.28	Buy Now
Quest Components	IXTP06N120P		840			1 $2.784 10 $2.784 100 $2.784 1000 $1.1484 10000 $1.1484	Buy Now
	IXTP06N120P		48			1 $2.784 10 $2.784 100 $1.5312 1000 $1.5312 10000 $1.5312	Buy Now
TTI	IXTP06N120P	Tube			300	1 - 10 - 100 - 1000 $2.24 10000 $2.24	Buy Now
TME	IXTP06N120P				1	1 $3.77 10 $3 100 $2.7 1000 $2.7 10000 $2.7	Get Quote
New Advantage Corporation	IXTP06N120P		236		1	1 - 10 - 100 $5.02 1000 $4.69 10000 $4.69	Buy Now

IXTP06N120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTP06N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 600MA TO-220		Original	PDF

IXTP06N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXTA06N120P Abstract: IXTP06N120P diode 028 Text: IXTA06N120P IXTP06N120P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 32Ω Ω TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA06N120P IXTP06N120P O-263 06N120P 04-02-08-B IXTA06N120P IXTP06N120P diode 028	PDF
IXTA06N120P Abstract: No abstract text available Text: PolarTM Power MOSFET VDSS ID25 IXTA06N120P IXTP06N120P RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A Ω ≤ 34Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	IXTA06N120P IXTP06N120P O-263 06N120P 04-02-08-B IXTA06N120P	PDF
IXTA06N120P Abstract: IXTP06N120P 06N120P ixtp06n120 06N120 Text: IXTA06N120P IXTP06N120P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 34Ω Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous	Original	IXTA06N120P IXTP06N120P O-263 06N120P 04-02-08-B IXTA06N120P IXTP06N120P 06N120P ixtp06n120 06N120	PDF
IXTA06N120P Abstract: No abstract text available Text: PolarTM Power MOSFET IXTA06N120P IXTP06N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 32Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA06N120P IXTP06N120P O-263 06N120P 04-02-08-B IXTA06N120P	PDF
IXTA06N120P Abstract: IXTA06N120 ixtp06n120p 06N120P IXTP ixtp06n120 06N120 Text: Polar VHVTM Power MOSFET IXTA06N120P IXTP06N120P VDSS ID25 RDS on = 1200V = 0.6A ≤ Ω 32Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA06N120P IXTP06N120P O-263 06N120P 1-08-06-A IXTA06N120P IXTA06N120 ixtp06n120p 06N120P IXTP ixtp06n120 06N120	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF