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Littelfuse Inc IXTF1N450 MOSFET N-CH 4500V 900MA I4PAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTF1N450	Tube	87		1	1 $97.59 10 $97.59 100 $80.5939 1000 $80.5939 10000 $80.5939	Buy Now
Verical	IXTF1N450		4		4	1 - 10 $138.3066 100 $138.3066 1000 $138.3066 10000 $138.3066	Buy Now
Newark	IXTF1N450	Bulk	11		1	1 $73.35 10 $73.35 100 $73.35 1000 $73.35 10000 $73.35	Buy Now
IXYS Corporation IXTF1N400 MOSFET N-CH 4000V 1A I4PAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTF1N400	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXTF1N250 MOSFET N-CH 2500V 1A ISOPLUS I4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTF1N250	Tube			300	1 - 10 - 100 - 1000 $42.62 10000 $42.62	Buy Now
Newark	IXTF1N250	Bulk			300	1 - 10 - 100 $44.67 1000 $44.67 10000 $44.67	Buy Now
IXYS Corporation IXTF1N450 MOSFETs 4500V 0.9A HV Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTF1N450		209			1 $97.58 10 $91.51 100 $83.95 1000 $83.95 10000 $83.95	Buy Now
TTI	IXTF1N450	Tube			300	1 - 10 - 100 - 1000 $79.14 10000 $79.14	Buy Now
IXYS Corporation IXTF1N250 MOSFETs 2500V 1A HV Power MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTF1N250					1 - 10 - 100 - 1000 $44.02 10000 $44.02	Get Quote

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IXTF1N Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IXTF1N400		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4000V 1A ISOPLUS I4		Original	PDF
IXTF1N450		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 900MA I4PAK		Original	PDF

IXTF1N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
t1n-400 Abstract: IXTF1N400 Text: Preliminary Technical Information IXTF1N400 High Voltage Power MOSFET VDSS ID25 RDS on = 4000V = 1A Ω ≤ 60Ω N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTF1N400 1N400 5-09-A t1n-400 IXTF1N400
T1N400 Abstract: IXTF1N400 1N400 diode diode 1n400 IXTF1N Text: IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTF1N400 50/60Hz, 1N400 5-09-A T1N400 IXTF1N400 1N400 diode diode 1n400 IXTF1N
IXTF1N250 Abstract: T1N2 1N250 Text: Advance Technical Information High Voltage Power MOSFET IXTF1N250 VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTF1N250 500mA 1N250 12-17-09-B IXTF1N250 T1N2 1N250
Untitled Abstract: No abstract text available Text: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR	Original	PDF	IXTF1N250 500mA 1N250 12-17-09-B
IXTF1N400 Abstract: No abstract text available Text: IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 90°C 4000 V VDGR TJ = 25°C to 90°C, RGS = 1MΩ	Original	PDF	IXTF1N400 1N400 5-09-A IXTF1N400
IXTF1N450 Abstract: No abstract text available Text: IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 0.9A   80 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M	Original	PDF	IXTF1N450 100ms 1N450 H7-P640) IXTF1N450
IXTF1N400 Abstract: 1N400 diode 1N400 diode 1n400 T1N400 200v mosfet Text: Preliminary Technical Information IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V	Original	PDF	IXTF1N400 50/60Hz, 1N400 5-09-A IXTF1N400 1N400 diode diode 1n400 T1N400 200v mosfet
IXTF1N400 Abstract: No abstract text available Text: High Voltage Power MOSFET VDSS ID25 IXTF1N400 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXTF1N400 1N400 5-09-A IXTF1N400
1N450 Abstract: IXTF1N450 Text: Advance Technical Information IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 0.9A Ω ≤ 85Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 4500 V VDGR	Original	PDF	IXTF1N450 50/60Hz, 1N450 IXTF1N450
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	PDF	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250