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    IXTF1N Search Results

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    IXTF1N Price and Stock

    Littelfuse Inc IXTF1N450

    MOSFET N-CH 4500V 900MA I4PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTF1N450 Tube 57 1
    • 1 $87.39
    • 10 $87.39
    • 100 $77.9256
    • 1000 $77.9256
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    Newark IXTF1N450 Bulk 11 1
    • 1 $73.35
    • 10 $73.35
    • 100 $73.35
    • 1000 $73.35
    • 10000 $73.35
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    Littelfuse Inc IXTF1N250

    MOSFET N-CH 2500V 1A ISOPLUS I4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTF1N250 Tube 300
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    • 1000 $42.62
    • 10000 $42.62
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    Newark IXTF1N250 Bulk 300
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    IXYS Corporation IXTF1N400

    MOSFET N-CH 4000V 1A I4PAC
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    DigiKey IXTF1N400 Tube
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    IXYS Corporation IXTF1N450

    MOSFETs 4500V 0.9A HV Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTF1N450 202
    • 1 $93.28
    • 10 $90.74
    • 100 $87.04
    • 1000 $87.04
    • 10000 $87.04
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    TTI IXTF1N450 Tube 300
    • 1 -
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    • 1000 $76.03
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    IXYS Corporation IXTF1N250

    MOSFETs 2500V 1A HV Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTF1N250
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    • 1000 $44.02
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    IXTF1N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTF1N400 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4000V 1A ISOPLUS I4 Original PDF
    IXTF1N450 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 4500V 900MA I4PAK Original PDF

    IXTF1N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    t1n-400

    Abstract: IXTF1N400
    Text: Preliminary Technical Information IXTF1N400 High Voltage Power MOSFET VDSS ID25 RDS on = 4000V = 1A Ω ≤ 60Ω N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTF1N400 1N400 5-09-A t1n-400 IXTF1N400 PDF

    T1N400

    Abstract: IXTF1N400 1N400 diode diode 1n400 IXTF1N
    Text: IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTF1N400 50/60Hz, 1N400 5-09-A T1N400 IXTF1N400 1N400 diode diode 1n400 IXTF1N PDF

    IXTF1N250

    Abstract: T1N2 1N250
    Text: Advance Technical Information High Voltage Power MOSFET IXTF1N250 VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTF1N250 500mA 1N250 12-17-09-B IXTF1N250 T1N2 1N250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR


    Original     		IXTF1N250 500mA 1N250 12-17-09-B PDF

    IXTF1N400

    Abstract: No abstract text available
    Text: IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 90°C 4000 V VDGR TJ = 25°C to 90°C, RGS = 1MΩ


    Original     		IXTF1N400 1N400 5-09-A IXTF1N400 PDF

    IXTF1N450

    Abstract: No abstract text available
    Text: IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 0.9A   80 (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 4500 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		IXTF1N450 100ms 1N450 H7-P640) IXTF1N450 PDF

    IXTF1N400

    Abstract: 1N400 diode 1N400 diode 1n400 T1N400 200v mosfet
    Text: Preliminary Technical Information IXTF1N400 High Voltage Power MOSFET VDSS ID25 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V


    Original     		IXTF1N400 50/60Hz, 1N400 5-09-A IXTF1N400 1N400 diode diode 1n400 T1N400 200v mosfet PDF

    IXTF1N400

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSS ID25 IXTF1N400 = 4000V = 1A Ω ≤ 60Ω RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 4000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTF1N400 1N400 5-09-A IXTF1N400 PDF

    1N450

    Abstract: IXTF1N450
    Text: Advance Technical Information IXTF1N450 High Voltage Power MOSFET VDSS ID25 RDS on = 4500V = 0.9A Ω ≤ 85Ω (Electrically Isolated Tab) ISOPLUS i4-PakTM N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 4500 V VDGR


    Original     		IXTF1N450 50/60Hz, 1N450 IXTF1N450 PDF

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 PDF