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    IXGR48N60C3 Price and Stock

    IXYS Corporation IXGR48N60C3D1

    IGBT PT 600V 56A ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGR48N60C3D1 Tube 380 1
    • 1 $16.33
    • 10 $16.33
    • 100 $13.22333
    • 1000 $11.27884
    • 10000 $11.27884
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    Mouser Electronics IXGR48N60C3D1 433
    • 1 $16.33
    • 10 $14.38
    • 100 $13.22
    • 1000 $11.27
    • 10000 $11.27
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    TTI IXGR48N60C3D1 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $13.35
    • 10000 $13.35
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    TME IXGR48N60C3D1 296 1
    • 1 $10.74
    • 10 $8.53
    • 100 $7.15
    • 1000 $7.15
    • 10000 $7.15
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    IXGR48N60C3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGR48N60C3D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 125W ISOPLUS247 Original PDF

    IXGR48N60C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48N60C3D1

    Abstract: ixgr48n60c3d1 48N60
    Text: GenX3TM 600V IGBT with Diode IXGR48N60C3D1 VCES IC25 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF IXGR48N60C3D1 40-100kHz IC110 247TM ID110 48N60C3D1 ixgr48n60c3d1 48N60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHTTM IGBT with Diode VCES IC25 VCE sat tfi(typ) IXGR48N60C3D1 (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ 600 V VGES


    Original     		PDF IXGR48N60C3D1 IC110 ID110

    IXGR48N60C3D1

    Abstract: 48N60C3D1 ixgr48n60 48N60 ixgr48n60c3 ixgr48 48N60C3 ISOPLUS247
    Text: IXGR48N60C3D1 GenX3TM 600V IGBT with Diode VCES IC25 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤ = 600V 56A 2.7V 38ns High Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF IXGR48N60C3D1 40-100kHz IC110 ID110 247TM IXGR48N60C3D1 48N60C3D1 ixgr48n60 48N60 ixgr48n60c3 ixgr48 48N60C3 ISOPLUS247

    Inverter Welder

    Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
    Text: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM


    Original     		PDF PB60IGBTA3B3C3 Inverter Welder inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250