Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXGP30N60B4D1 Search Results

    SF Impression Pixel

    IXGP30N60B4D1 Price and Stock

    IXYS Corporation IXGP30N60B4D1

    IGBT 600V 56A 190W TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGP30N60B4D1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXGP30N60B4D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGP30N60B4D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO220 Original PDF

    IXGP30N60B4D1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGP30N60B4D1

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES = IC110 = VCE sat  tfi(typ) = High-Speed PT Trench IGBT 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M


    Original     		PDF IXGP30N60B4D1 IC110 O-220 IF110 338B2 IXGP30N60B4D1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGP30N60B4D1 IC110 O-220 IF110 338B2

    IXGP30N60B4D1

    Abstract: 727 diode IF110 IXGP30N60B
    Text: Advance Technical Information High-Gain IGBT w/ Diode IXGP30N60B4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGP30N60B4D1 IC110 O-220 IF110 338B2 IXGP30N60B4D1 727 diode IF110 IXGP30N60B