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    IXGP10N90 Search Results

    IXGP10N90 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGP10N90 IXYS Power MOSIGBTs Scan PDF
    IXGP10N90A IXYS Power MOSIGBTs Scan PDF

    IXGP10N90 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    10N80A

    Abstract: 10n80 TO-238
    Text: ' 4686226 I X Y S CO RP 03 DeT| MbflbSSti OQOQ Sa a S -p^ej. 53 IXGP10N80, 90, 100 IXGM10N80, 90, 100 10 A M PS, 8 Ò 0 -1 0 0 0 VOLTS MAXIMUM RATINGS IXGP10N80 IXGM10N80 IXGP10N90 IXGM10N90 IXGP10N100 IXGM10N100 Unit Drain-Source Voltage 1 Vdss 800 900


    OCR Scan     		4bflb25b Q00G222 IXGP10N80, IXGM10N80, IXGP10N80 IXGM10N80 IXGP10N90 IXGP10N100 IXGM10N90 IXGM10N100 10N80A 10n80 TO-238 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4686226 03E I X Y S.CORP I X Y S CORP □3 00159 D D Ë J 4böb22t, D O D D I S T 5 |~ Power MOSIGBTs Part Number IXGP10N100 CollectorEmitter Voltage Vces Volts 1000 Continuous Pulsed Collector Current Fall Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time


    OCR Scan     		IXGP10N100 IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N8 IXGP10N100A IXGH40N60 IXGH40N60A IXGH30N60 IXGH30N60A PDF

    IXGH30N50A

    Abstract: IXGP10N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGP10N50 IXGH20N80 1xgp10n60a IXGH25N90A
    Text: 4686226 I X I X Y 03E S.CORP Y S CORP □3 00159 O D E I 4böb25t. DOODIST E Power MOSIGBTs Part N um ber CollectorEmitter Voltage Vces Votts Continuous Pulsed Collector Current Power Fall Dis s. Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time


    OCR Scan     		IXGP10N100 IXGP10N100A IXGP10N90 IXGP10N90A IXGP10N80 IXGP10N80A IXGP10N60 1XGP10N60A IXGP10N50 IXGP10N50A IXGH30N50A IXGH20N50A IXGH40N60 IXGH40N60A IXGH30N60A IXGH20N80 IXGH25N90A PDF

    IXGH30N50A

    Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
    Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono­ lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses


    OCR Scan     		4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60 PDF