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    IXGN50N60 Search Results

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    IXGN50N60 Price and Stock

    IXYS Corporation IXGN50N60BD2

    IGBT MOD 600V 75A 250W SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGN50N60BD2 Tube
    • 1 -
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    Bristol Electronics IXGN50N60BD2 86 1
    • 1 $30
    • 10 $30
    • 100 $26.538
    • 1000 $26.538
    • 10000 $26.538
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    Quest Components IXGN50N60BD2 68
    • 1 $32.5
    • 10 $32.5
    • 100 $28.75
    • 1000 $28.75
    • 10000 $28.75
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    IXYS Corporation IXGN50N60BD3

    IGBT MOD 600V 75A 250W SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGN50N60BD3 Tube
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    IXGN50N60 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGN50N60 IXYS Power MOSIGBTs Scan PDF
    IXGN50N60B IXYS 600V HiPerFAST IGBT Original PDF
    IXGN50N60B IXYS HiPerFAST IGBT Original PDF
    IXGN50N60BD2 IXYS IGBT Modules: Boost Configurated IGBT Modules Original PDF
    IXGN50N60BD2. IXYS Power Factor Correction Modules Original PDF
    IXGN50N60BD3 IXYS Buck Configuration Original PDF

    IXGN50N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD3 diode

    Abstract: 50N60BD2 w a2a
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 75


    Original     		PDF 50N60BD2 50N60BD3 Applic100 BD3 diode w a2a

    IGBT 60A

    Abstract: ixgn50N60 60-06A IXGN50N60BD2 IXGN50N60BD3 ixgn
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		PDF 50N60BD2 50N60BD3 OT-227B, 0-06A IGBT 60A ixgn50N60 60-06A IXGN50N60BD2 IXGN50N60BD3 ixgn

    50N60BD3

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT Preliminary data sheet .BD2 Test Conditions VCES TJ = 25°C to 150°C 600 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 50N60BD2 50N60BD3 OT-227B, IXGN50N60BD2 IXGN50N60BD3 0-06A 50N60BD3

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD2 IXGN 50N60BD3 Buck & boost configurations IGBT .BD2 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		PDF 50N60BD2 50N60BD3 OT-227B, IXGN50N60BD2 0-06A

    DIN 46249 TERMINALS

    Abstract: ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4
    Text: I X Y S CORP IS E D 4ti8b25fcj O O O O S S O T ]\/[OSBLOC MODULES The MOSBLOC family of isolated modules are designed for high power industrial and commercial applica­ tions requiring improved ruggedness and efficiency. They are available with either IXYS* advanced MOSIGBTs


    OCR Scan     		PDF 4ti8b25fcj DIN 46249 TERMINALS ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4

    ixgr32n60cd1

    Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
    Text: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1


    OCR Scan     		PDF O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60

    Untitled

    Abstract: No abstract text available
    Text: m yY V C •■¡I O jl IXGN 50N60BD2 IXGN 50N60BD3 HiPerFAST IGBT with HiPerFRED V CES ^C25 V CE sat t Buck & boost configurations = 600 V = 75 A = 2.5 V = 150 ns IGBT .BD2 Symbol TestC onditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V CGR


    OCR Scan     		PDF 50N60BD2 50N60BD3 IXGN50N60BD2 120AlF=

    IXGN40N60

    Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
    Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES


    OCR Scan     		PDF ISOPLUS247TM O-220 PLUS247TM O-263 O-268 O-247 ISOPLUS220 O-264 PLUS264TM IXGA12N100U1* IXGN40N60 IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1

    IXGH30N50A

    Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60
    Text: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono­ lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses


    OCR Scan     		PDF 4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60

    Ixgr50n60

    Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C
    Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces *C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J* ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)


    OCR Scan     		PDF O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C