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    IXGK50N60BU1 Price and Stock

    IXYS Corporation IXGK50N60BU1

    IGBT 600V 75A 300W TO264AA
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    IXGK50N60BU1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGK50N60BU1 IXYS HiPerFAST IGBT with Diode Original PDF

    IXGK50N60BU1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N60

    Abstract: 50n50 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B
    Text: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW


    Original
    PDF 100ns 120ns 50N50BU1 50N60BU1 50N50 50N60 O-264 IXGK50N50BU1 IXGK50N60BU1 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B

    50N60

    Abstract: G 50N60 50n50 50n50bu1 IXGH50N60B 50n60 transistor IXGK50N50BU1 IXGK50N60BU1 50N50B
    Text: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW


    Original
    PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 O-264 IXGK50N50BU1 IXGK50N60BU1 50N60 G 50N60 50n50 50n50bu1 IXGH50N60B 50n60 transistor IXGK50N50BU1 IXGK50N60BU1 50N50B

    ixgr32n60cd1

    Abstract: IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60
    Text: Discrete IGBTs with FRED Diode U r u G series *C<25> min V A v T0-220(P CSH5A.T) max V typ ne PLUS247 (X) TO-268(T) ISOPLUS247™(R) TO-247(H) T0-204(M) TO-264(K) SOT-227B(N) J0* TO-263(A) ► NetV LOW SATURATION VOLTAGE TYPES 600 1000 40 2.0 200 IXGH28N60D1


    OCR Scan
    PDF O-268 ISOPLUS247TM OT-227B T0-220 PLUS247TM O-263 O-247 T0-204 O-264 IXGA12N100U1 ixgr32n60cd1 IXGT-32N60BD1 IXGH32N60CD1 IXGH24N60CD1 IXGH17N100AU1 IXGK50N60BD1 IXGH24N60BD1 IXGH40N30BD ixgh15n120cd1 IXGH32N60

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan
    PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 IXGK50N50BU1 IXGK50N60BU1

    G 50N60

    Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
    Text: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C


    OCR Scan
    PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 O-264 G 50N60 igbt 100a IXGH50N60B