IXGH50N60C4D1
Abstract: IXGQ50N60C4D1 G50N60 g50n
Text: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 46A VCE sat ≤ 2.3V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V
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IXGQ50N60C4D1
IXGH50N60C4D1
IC110
IC110
IF110
O-247
IXGH50N60C4D1
G50N60
g50n
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Untitled
Abstract: No abstract text available
Text: High-Gain IGBTs w/ Diode VCES = 600V IC110 = 46A VCE sat ≤ 2.3V IXGQ50N60C4D1 IXGH50N60C4D1 High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V
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Original
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PDF
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IC110
IXGQ50N60C4D1
IXGH50N60C4D1
IF110
O-247
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G50N60
Abstract: IXGH50N60C4D1 IXGQ50N60C4D1
Text: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 36A VCE sat ≤ 2.50V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V
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Original
|
PDF
|
IXGQ50N60C4D1
IXGH50N60C4D1
IC110
IC110
IF110
O-247
G50N60
IXGH50N60C4D1
|