Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXGH32N50BU1S Search Results

    IXGH32N50BU1S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGH32N50BU1S IXYS HiPerFAST IGBT with Diode Combi Pack Original PDF

    IXGH32N50BU1S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXGH32N50BU1

    Abstract: IXGH32N50BU1S
    Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S HiPerFASTTM IGBT with Diode Combi Pack VCES IC25 VCE sat tfi = = = = 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) IXGH32N50BU1 IXGH32N50BU1S

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM


    OCR Scan     		PDF IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S)

    MJI-25

    Abstract: No abstract text available
    Text: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2


    OCR Scan     		PDF IXGH32N50BU1 IXGH32N50BU1S O-247 32N50BU1S) MJI-25