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    IXYS Corporation IXGH24N60C4D1

    IGBT 600V 56A 190W TO247
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    IXGH24N60C4D1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH24N60C4D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247 Original PDF

    IXGH24N60C4D1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXGH24N60C4D1

    Abstract: 24N60C4D1 G24N60
    Text: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM


    Original     		IXGH24N60C4D1 IC110 O-247 IF110 24N60C4D1 IXGH24N60C4D1 G24N60 PDF

    IXGH24N60C4D1

    Abstract: IF110
    Text: Advance Technical Information High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGH24N60C4D1 IC110 O-247 IF110 338B2 IXGH24N60C4D1 IF110 PDF

    24N60C4D1

    Abstract: G24N60
    Text: High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGH24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM


    Original     		IC110 IXGH24N60C4D1 O-247 IF110 24N60C4D1 G24N60 PDF