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IXYS Corporation IXGH28N120BD1 IGBT 1200V 50A 250W TO247
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IXGH 28N120BD1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IXGH28N120BD1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 250W TO247		Original	PDF
IXGH 28N120BD1		IXYS	High Voltage IGBT with Diode		Original	PDF
IXGH28N120BD1		IXYS	IGBT Discretes		Original	PDF

IXGH 28N120BD1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXGH 28N120BD1 Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247)
IXGH 28N120BD1 Abstract: igbt induction cooker 28N120 Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES	Original	PDF	28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120
igbt induction cooker Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker
IXGH 28N120BD1 Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	28N120B IC110 O-268 O-247
28N120 Abstract: No abstract text available Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	28N120B IC110 O-268 O-247 28N120