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IXYS Corporation IXGH28N120BD1 IGBT 1200V 50A 250W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH28N120BD1	Tube			30	1 - 10 - 100 $8.41267 1000 $8.41267 10000 $8.41267	Buy Now
IXYS Corporation IXGH28N120B Trans IGBT Chip N-CH 1200V 50A 250W 3-Pin(3+Tab) TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXGH28N120B		55		38	1 - 10 - 100 $2.626 1000 $2.626 10000 $2.626	Buy Now
Arrow Electronics	IXGH28N120B		55		38	1 - 10 - 100 $2.626 1000 $2.626 10000 $2.626	Buy Now
Littelfuse Inc IXGH28N120B IGBT discrete
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip1Stop	IXGH28N120B		55			1 - 10 - 100 $2.81 1000 $2.81 10000 $2.81	Buy Now

IXGH 28N120B Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH 28N120B		IXYS	High Voltage IGBT		Original	PDF
IXGH28N120B		IXYS	IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT		Original	PDF
IXGH28N120BD1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 50A 250W TO247		Original	PDF
IXGH 28N120BD1		IXYS	High Voltage IGBT with Diode		Original	PDF
IXGH28N120BD1		IXYS	IGBT Discretes		Original	PDF

IXGH 28N120B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXGH 28N120BD1 Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH 28N120BD1
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247)
IXGH 28N120BD1 Abstract: igbt induction cooker 28N120 Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES	Original	PDF	28N120BD1 IXGH 28N120BD1 igbt induction cooker 28N120
28N120B Abstract: RG201 Text: Advanced Technical Data High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	PDF	28N120B O-268 O-247 728B1 123B1 065B1 RG201
igbt induction cooker Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	28N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker
IXGH 28N120BD1 Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 28N120BD1 IXGT 28N120BD1 = 1200 = 50 = 3.5 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120BD1 28N120BD1 IC110 O-247AD O-268 O-247) 405B2 IXGH 28N120BD1
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	28N120B IC110 O-268 O-247
Untitled Abstract: No abstract text available Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120B IC110 O-268 O-247 728B1 123B1 065B1
igbt induction cooker Abstract: induction cooker application notes siemens igbt 28N120B IXGH 28N120B Text: High Voltage IGBT Preliminary Data Sheet IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM	Original	PDF	28N120B IC110 O-268 O-247 728B1 123B1 728B1 065B1 28N120B igbt induction cooker induction cooker application notes siemens igbt IXGH 28N120B
28N120 Abstract: No abstract text available Text: High Voltage IGBT IXGH 28N120B VCES = 1200 V = 50 A IXGT 28N120B IC25 VCE sat = 3.5 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	PDF	28N120B IC110 O-268 O-247 28N120
7N60B equivalent Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2 Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain	Original	PDF	7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2