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    IXFV15N100P Search Results

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    IXFV15N100P Price and Stock

    IXYS Corporation IXFV15N100P

    MOSFET N-CH 1000V 15A PLUS220
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    IXYS Corporation IXFV15N100PS

    MOSFET N-CH 1000V 15A PLUS220SMD
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    IXFV15N100P Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFV15N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 15A PLUS220 Original PDF
    IXFV15N100PS IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 15A PLUS220SMD Original PDF

    IXFV15N100P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions


    Original     		PDF IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH15N100P IXFV15N100P IXFV15N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P

    IXFH15N100P

    Abstract: 15N100P F15N PLUS220SMD 15n10 IXFH15N100
    Text: PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G D S Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS


    Original     		PDF IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P IXFH15N100P F15N PLUS220SMD 15n10 IXFH15N100