IXFH15N100P Search Results

IXFH15N100P Price and Stock

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Littelfuse Inc IXFH15N100P MOSFET N-CH 1000V 15A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH15N100P	Tube	873		1	1 $12.56 10 $12.56 100 $7.57567 1000 $6.19775 10000 $6.19775	Buy Now
Newark	IXFH15N100P	Bulk			300	1 - 10 - 100 - 1000 $6.5 10000 $6.5	Buy Now
RS	IXFH15N100P	Bulk		8 Weeks	30	1 - 10 - 100 $9.59 1000 $9.59 10000 $9.59	Get Quote
IXYS Corporation IXFH15N100P MOSFETs 15 Amps 1000V 0.76 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH15N100P					1 $11.21 10 $11.2 100 $7.48 1000 $6.72 10000 $6.72	Get Quote
Future Electronics	IXFH15N100P	Tube			300	1 - 10 - 100 $6.18 1000 $6.08 10000 $6.08	Buy Now
Quest Components	IXFH15N100P		5			1 $16.38 10 $14.56 100 $14.56 1000 $14.56 10000 $14.56	Buy Now
TTI	IXFH15N100P	Tube			300	1 - 10 - 100 - 1000 $7.41 10000 $7.41	Buy Now
TME	IXFH15N100P		300		1	1 $11.54 10 $9.11 100 $8.19 1000 $8.19 10000 $8.19	Buy Now

Chip 1 Exchange	IXFH15N100P		9,471			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IXFH15N100P		7,250		1	1 - 10 - 100 $12.76 1000 $12.76 10000 $11.91	Buy Now

IXFH15N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFH15N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 15A TO-247		Original	PDF

IXFH15N100P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions	Original	IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P	PDF
Untitled Abstract: No abstract text available Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH15N100P IXFV15N100P IXFV15N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions Maximum Ratings VDSS	Original	IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P	PDF
IXFH15N100P Abstract: 15N100P F15N PLUS220SMD 15n10 IXFH15N100 Text: PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G D S Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS	Original	IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P IXFH15N100P F15N PLUS220SMD 15n10 IXFH15N100	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250	PDF