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    IXFN26N100P Search Results

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    IXFN26N100P Price and Stock

    Littelfuse Inc IXFN26N100P

    MOSFET N-CH 1000V 23A SOT-227B
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    DigiKey IXFN26N100P Tube 300
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    Newark IXFN26N100P Bulk 300
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    IXYS Corporation IXFN26N100P

    Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds
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    Mouser Electronics IXFN26N100P
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    Future Electronics IXFN26N100P Tube 26 Weeks 10
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    TTI IXFN26N100P Tube 300
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    TME IXFN26N100P 6 1
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    New Advantage Corporation IXFN26N100P 16 1
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    IXFN26N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN26N100P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 23A SOT-227B Original PDF

    IXFN26N100P Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = 1000V = 23A ≤ 390mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions


    Original     		PDF IXFN26N100P 300ns OT-227 E153432 26N100P 3-07-A

    IXFN26N100P

    Abstract: No abstract text available
    Text: IXFN26N100P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN26N100P 300ns OT-227 E153432 26N100P 3-28-08-B IXFN26N100P

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFN26N100P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFN26N100P 300ns OT-227 E153432 26N100P 3-28-08-B

    1200 volt mosfet

    Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
    Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET


    Original     		PDF 000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P