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    IXFN21N100 Search Results

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    IXFN21N100 Price and Stock

    IXYS Corporation IXFN21N100Q

    MOSFET N-CH 1000V 21A SOT-227B
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    IXFN21N100 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFN21N100Q IXYS 1000V trench power MOSFET Q-class Original PDF

    IXFN21N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXFN21N100 Transistors Independent MOSFET Power Module Circuits Per Package1 V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)21 Absolute Max. Power Diss. (W)520 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case240m I(DSS) Min. (A)500u I(GSS) Max. (A)200n


    Original     		PDF IXFN21N100 Junc-Case240m time50nà StyleSOT-227B Code4-166 NumberTR00400166

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    Untitled

    Abstract: No abstract text available
    Text: IXFN21N100 v DSS HiPerFET Power MOSFET cont P DS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions v Tj = 25°C to 150°C v DGR ^ ¥dss = Maximum Ratings 25°C to 150°C; R GS = 1M i2 1000 V 1000 V Continuous ±20


    OCR Scan     		PDF IXFN21N100 OT-227 IXFN21N100 000212b

    IXFN21N100

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFET IXFN21N100 v DSS cont P DS(on) N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Maximum Ratings VDSS VDGR Tj = 25°C to 150°C 1000 V Tj = 25°C to 150°C; RGS = 1 Mi2 1000 V Ves vGSM Continuous


    OCR Scan     		PDF IXFN21N100 OT-227

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50