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    IXFN140N30P Search Results

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    IXFN140N30P Price and Stock

    Littelfuse Inc IXFN140N30P

    MOSFET N-CH 300V 110A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN140N30P Tube 231 1
    • 1 $24.3
    • 10 $22.166
    • 100 $22.166
    • 1000 $22.166
    • 10000 $22.166
    		Buy Now

    IXYS Corporation IXFN140N30P

    Discrete Semiconductor Modules 140 Amps 300V 0.024 Ohm Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN140N30P 483
    • 1 $24.3
    • 10 $22.16
    • 100 $22.16
    • 1000 $22.16
    • 10000 $22.16
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    TTI IXFN140N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $22.45
    • 10000 $22.45
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    TME IXFN140N30P 1
    • 1 $34.86
    • 10 $27.65
    • 100 $27.65
    • 1000 $27.65
    • 10000 $27.65
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    New Advantage Corporation IXFN140N30P 220 1
    • 1 -
    • 10 $34.23
    • 100 $34.23
    • 1000 $31.95
    • 10000 $31.95
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    IXFN140N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFN140N30P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 110A SOT-227B Original PDF

    IXFN140N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXFN140N30P

    Abstract: No abstract text available
    Text: IXFN140N30P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20


    Original     		PDF IXFN140N30P 200ns OT-227 E153432 140N30P 3-08-A 5-13-08-B IXFN140N30P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFN140N30P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20


    Original     		PDF IXFN140N30P 200ns OT-227 E153432 140N30P 3-08-A 5-13-08-B

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    ixfn 140n30p

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


    Original     		PDF 140N30P OT-227 E153432 IXFN140N30P ixfn 140n30p

    ixfn 140n30p

    Abstract: sot 227b diode fast UL 486 torque values 710 115 IXFN140N30P 123B16
    Text: Preliminary Technical Information PolarHVTM HiPerFET IXFN 140N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 140N30P 405B2 ixfn 140n30p sot 227b diode fast UL 486 torque values 710 115 IXFN140N30P 123B16

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    IXFB100N50P

    Abstract: IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P
    Text: HIGH CURRENT POLAR HIPERFET POWER MOSFETS N E W P R O D U C T B R I E F SUMMARY TABLE TM TM SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH CURRENT/HIGH POWER APPLICATIONS July 2006 Type B PLUS264 Description IXYS’ New High Current PolarHT™ and PolarHV™ Power MOSFETs bring many benefits to the


    Original     		PDF PLUS264 ISOPLUS247TM E153432) IXFB100N50P IXFN60N80P IXFK44N80P IXFK64N60P fast diode SOT-227 IXFN100N50P IXFB60N80P IXFK80N50P IXFX44N80P IXFN82N60P