Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXFN 180N10 Search Results

    SF Impression Pixel

    IXFN 180N10 Price and Stock

    IXYS Corporation IXFN180N10

    MOSFET N-CH 100V 180A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN180N10 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Mouser Electronics IXFN180N10 253
    • 1 $37.91
    • 10 $32.22
    • 100 $28.28
    • 1000 $27.27
    • 10000 $27.27
    		Buy Now
    TTI IXFN180N10 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXFN 180N10 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFN180N10 IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 180A SOT-227B Original PDF
    IXFN180N10 IXYS 100V HiPerFET power MOSFET Original PDF

    IXFN 180N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)


    Original     		PDF 180N10 OT-227 E15000 100kHz 125OC

    IXFN 180N10

    Abstract: 180n10
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions VDSS VDGR Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MW 100 100 miniBLOC, SOT-227 B (IXFN)


    Original     		PDF 180N10 OT-227 100kHz 125OC IXFN 180N10 180n10

    Tf 227

    Abstract: No abstract text available
    Text: Advanced Technical Information IXFN 180N10 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A = 8 mW trr £ 200 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V


    Original     		PDF 180N10 OT-227 E153432 Tf 227

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS


    Original     		PDF 180N10 OT-227 E153432 125OC

    180N10

    Abstract: IXFN 180N10 SOT-227 Package 125OC IXFN180N10
    Text: HiPerFETTM Power MOSFET IXFN 180N10 VDSS ID25 RDS on Single MOSFET Die = 100 V = 180 A Ω = 8 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 100 100 V V VGS


    Original     		PDF 180N10 OT-227 E153432 125OC 180N10 IXFN 180N10 SOT-227 Package 125OC IXFN180N10

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    Untitled

    Abstract: No abstract text available
    Text: mxYS Advanced Technical Information HiPerFET Power MOSFET IXFN 180N10 DSS I D25 RDS on Single MOSFET Die Tj = 25°C to 150°C Tj = 25°C to 150°C, Rgs = 1M£2 100 100 V V Vos« Continuous Transient ±20 ±30 V V Tc =25°C Terminal (current limit) T 0 = 25° C; pulse width limited by TJM


    OCR Scan     		PDF IXFN180N10 OT-227

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50