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    IXFN 130N30 Search Results

    IXFN 130N30 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SiT1602BC-81-30N-30.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT9365AI-2E1-30N30.720000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT9365AI-4E1-30N300.000000 SiTime Standard Frequency Low Jitter Differential XO Datasheet
    SiT1602BI-31-30N-30.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-11-30N-30.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-21-30N-30.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
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    IXFN 130N30 Price and Stock

    IXYS Corporation IXFN130N30

    MOSFET N-CH 300V 130A SOT-227B
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    DigiKey IXFN130N30 Tube 10
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    • 1000 $38.614
    • 10000 $38.614
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    IXFN 130N30 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFN130N30 IXYS 300V HiPerFET power MOSFET single die MOSFET Original PDF

    IXFN 130N30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    130N30

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A RDS on = 18 mW trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 130N30 125OC Figure10. 130N30

    IXFN 130N30

    Abstract: 130N30 125OC
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A RDS on = 18 mW trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 130N30 OT-227 E153432 125OC Figure10. IXFN 130N30 130N30 125OC

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300


    Original     		PDF 130N30 OT-227 E153432

    IXFN 130N30

    Abstract: 130N30 125OC
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A Ω RDS on = 22 mΩ trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300


    Original     		PDF 130N30 125OC 728B1 IXFN 130N30 130N30 125OC

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A Ω RDS on = 22 mΩ < 250 ns trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 300


    Original     		PDF 130N30 OT-227 E153432 125OC 728B1

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    Untitled

    Abstract: No abstract text available
    Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 130N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS 300 > vD0R Tj =25°Cto150°C T.J =25°Cto150°C; RrGS =1 M ft 300 > Vos


    OCR Scan     		PDF IXFN130N30 Cto150 OT-227 E153432

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V 130 A ^D25 R DS on = 18 mQ ” N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions V v DSS Td = 25°C to 150°C


    OCR Scan     		PDF 130N30 OT-227

    C1218

    Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
    Text: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268


    OCR Scan     		PDF 67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10

    52N30

    Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
    Text: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70


    OCR Scan     		PDF 76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50