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    IXFK35N50 Search Results

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    IXFK35N50 Price and Stock

    IXYS Corporation IXFK35N50

    MOSFET N-CH 500V 35A TO264AA
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    IXFK35N50 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFK35N50 IXYS 500V HiPerFET power MOSFET Original PDF

    IXFK35N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C


    Original     		PDF IXFK33N50 IXFK35N50 O-264 33N50 35N50

    35N50

    Abstract: NS4250 IXFK33N50 IXFK35N50
    Text: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C


    Original     		PDF IXFK33N50 IXFK35N50 O-264 33N50 35N50 35N50 NS4250 IXFK33N50 IXFK35N50

    35N50

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS RDS on 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr £ 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFK33N50 IXFK35N50 33N50 35N50 35N50 O-264

    IXAN0009

    Abstract: 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w
    Text: IXAN0009 HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY By Mr. Abhijit D. Pathak and Mr. Ralph E. Locher, IXYS Corporation Santa Clara, CA 95054 ABSTRACT As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power


    Original     		PDF IXAN0009 IXAN0009 0009 ixan0009 2 ixan0009 3 TMS320F2407a GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram inverter 500w USING MOSFET schematic diagram PWM inverter 500w

    TO-264-aa

    Abstract: No abstract text available
    Text: □ IXYS v DSS HiPerFET Power MOSFETs DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr D ^D25 Preliminary data Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C


    OCR Scan     		PDF IXFK33N50 IXFK35N50 33N50 35N50 O-264AA outlinesTO-264AAexceptL, TO-264-aa

    smd diode 513

    Abstract: TO-264 35n50
    Text: HiPerFET Power MOSFETs V DSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t D ^D25 DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q t < 250 ns Preliminary data Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C


    OCR Scan     		PDF IXFK33N50 IXFK35N50 33N50 35N50 35N50 O-264 smd diode 513 TO-264

    264AA

    Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA
    Text: HiPerFET Power MOSFETs ^D S S IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C


    OCR Scan     		PDF IXFK33N50 IXFK35N50 to150 33N50 35N50 O-264AA 264AA SMD-264 TO264AA smd diode 513 TO-264-aa diode 253 TO-264AA

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    TO-264-aa

    Abstract: d2529
    Text: IXYS HiPerFET IXFK 35N50 V DSS Power MOSFETs I D25 RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 500 V 35 A 0.15 Q trr <250 ns Preliminary data Symbol Test Conditions Maximum Ratings V oss Tj =25°Cto150°C 500 V VDGR T, = 25° C to 150° C; RGS= 1 M£2


    OCR Scan     		PDF 35N50 Cto150 TO-264-aa d2529

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50