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    IXFH40N50 Search Results

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    IXFH40N50 Price and Stock

    Littelfuse Inc IXFH40N50Q

    MOSFET N-CH 500V 40A TO247AD
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    DigiKey IXFH40N50Q Tube 30
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    IXYS Corporation IXFH40N50Q2

    MOSFET N-CH 500V 40A TO247AD
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    IXYS Corporation IXFH40N50Q

    MOSFET 500V 40A
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    Mouser Electronics IXFH40N50Q
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    Quest Components IXFH40N50Q 600
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    TTI IXFH40N50Q Tube 300
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    TME IXFH40N50Q 19 1
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    New Advantage Corporation IXFH40N50Q 120 1
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    IXFH40N50 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFH40N50 IXYS MOSFET Original PDF
    IXFH40N50Q IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFH40N50Q2 IXYS Discrete MOSFETs: HiPerFET Power MOSFETS Original PDF
    IXFH40N50Q2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 40A TO-247 Original PDF

    IXFH40N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 500 V ID25 = 40 A RDS on = 0.135 Ω IXFH40N50Q2 IXFK40N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFH40N50Q2 IXFK40N50Q2 O-247 O-264 728B1

    IXFH40N50Q2

    Abstract: No abstract text available
    Text: Advanced Technical Data HiPerFETTM Power MOSFETs IXFH40N50Q2 VDSS = 500 V = 40 A ID25 RDS on = 0.14 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFH40N50Q2 728B1 123B1 728B1 065B1 IXFH40N50Q2

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFH40N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 500V 40A Ω 160mΩ 250ns TO-247 (IXFH) Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFH40N50Q2 250ns O-247 40N50Q2 5-28-08-C

    IXFH40N50Q2

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH40N50Q2 VDSS = 500 V = 40 A ID25 RDS on = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFH40N50Q2 IXFH40N50Q2

    IXFH40N50Q2

    Abstract: IXFK40N50Q2
    Text: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 500 V ID25 = 40 A RDS on = 0.14 Ω IXFH40N50Q2 IXFK40N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFH40N50Q2 IXFK40N50Q2 O-247 728B1 IXFH40N50Q2 IXFK40N50Q2

    40n50

    Abstract: IXFH40N50Q2 IXFH40N50 F40N
    Text: HiPerFETTM Power MOSFETs Q2-Class IXFH40N50Q2 VDSS = = ID25 RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 500V 40A Ω 160mΩ 250ns TO-247 (IXFH) Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFH40N50Q2 250ns O-247 40N50Q2 5-28-08-C 40n50 IXFH40N50Q2 IXFH40N50 F40N

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50