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    IXYS Corporation IXFK40N50Q2

    MOSFET N-CH 40A TO264
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    IXFK40N50Q2 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 500 V ID25 = 40 A RDS on = 0.135 Ω IXFH40N50Q2 IXFK40N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFH40N50Q2 IXFK40N50Q2 O-247 O-264 728B1

    40n50

    Abstract: 40N50Q2 5-28-08-C IXFK40N50Q2
    Text: Preliminary Technical Information IXFK40N50Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = = ID25 RDS on ≤ ≤ trr 500V 40A Ω 160mΩ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions


    Original     		PDF IXFK40N50Q2 250ns O-264 40N50Q2 5-28-08-C 40n50 40N50Q2 5-28-08-C IXFK40N50Q2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFK40N50Q2 500V 40A Ω 160mΩ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr TO-264 (IXFK) Symbol Test Conditions


    Original     		PDF IXFK40N50Q2 250ns O-264 40N50Q2 5-28-08-C

    IXFH40N50Q2

    Abstract: IXFK40N50Q2
    Text: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 500 V ID25 = 40 A RDS on = 0.14 Ω IXFH40N50Q2 IXFK40N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF IXFH40N50Q2 IXFK40N50Q2 O-247 728B1 IXFH40N50Q2 IXFK40N50Q2