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    IXFH15N100P Search Results

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    IXFH15N100P Price and Stock

    Littelfuse Inc IXFH15N100P

    MOSFET N-CH 1000V 15A TO247AD
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    DigiKey IXFH15N100P Tube 1
    • 1 $11.92
    • 10 $11.92
    • 100 $9.51467
    • 1000 $7.51167
    • 10000 $6.76051
    		Buy Now

    IXYS Corporation IXFH15N100P

    MOSFET 15 Amps 1000V 0.76 Rds
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    Mouser Electronics IXFH15N100P
    • 1 -
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    • 1000 $11.92
    • 10000 $11.92
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    Quest Components IXFH15N100P 5
    • 1 $13.689
    • 10 $12.7764
    • 100 $12.7764
    • 1000 $12.7764
    • 10000 $12.7764
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    TTI IXFH15N100P Tube 300
    • 1 -
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    • 1000 $6.77
    • 10000 $6.77
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    TME IXFH15N100P 1
    • 1 $10.88
    • 10 $8.62
    • 100 $7.74
    • 1000 $7.74
    • 10000 $7.74
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    New Advantage Corporation IXFH15N100P 6,038 1
    • 1 -
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    • 100 $13.01
    • 1000 $13.01
    • 10000 $12.14
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    IXFH15N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFH15N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 15A TO-247 Original PDF

    IXFH15N100P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions


    Original     		PDF IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFH15N100P IXFV15N100P IXFV15N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 15A Ω 760mΩ 300ns PLUS220 (IXFV) G D S Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P

    IXFH15N100P

    Abstract: 15N100P F15N PLUS220SMD 15n10 IXFH15N100
    Text: PolarTM Power MOSFET HiPerFETTM IXFH15N100P IXFV15N100P IXFV15N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G D S Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS


    Original     		PDF IXFH15N100P IXFV15N100P IXFV15N100PS 300ns PLUS220 15N100P IXFH15N100P F15N PLUS220SMD 15n10 IXFH15N100

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXGP70N33

    Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
    Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim


    Original     		PDF D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250