Untitled
Abstract: No abstract text available
Text: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,
|
Original
|
30N50Q
32N50Q
32N50
125OC
|
PDF
|
IXFH120N15P
Abstract: No abstract text available
Text: PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
|
Original
|
120N15P
IXFH120N15P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
|
Original
|
120N15P
|
PDF
|
32N50Q
Abstract: IXFH32N50Q
Text: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM IAR TC = 25°C, pulse width limited by TJM
|
Original
|
32N50Q
32N50Q
O-247
O-268
125OC
IXFH32N50Q
|
PDF
|
32N50Q
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C TC = 25°C, pulse width limited by TJM
|
Original
|
32N50Q
32N50Q
O-247
O-268
125OC
|
PDF
|
sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
|
Original
|
O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 23 A RDS on = 0.42 Ω trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
|
Original
|
IXFH23N80Q
IXFT23N80Q
O-247
O-268
728B1
123B1
728B1
065B1
|
PDF
|
IXFH23N80Q
Abstract: transistor N 343 AD
Text: HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS on = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
|
Original
|
IXFH23N80Q
IXFT23N80Q
728B1
123B1
728B1
065B1
IXFH23N80Q
transistor N 343 AD
|
PDF
|
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
|
Original
|
MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
|
PDF
|
IXFP76N15T2
Abstract: IXFA76N15T2
Text: Preliminary Technical Information IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 TrenchT2TM HiperFETTM Power MOSFET VDSS ID25 = 150V = 76A 20m RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP)
|
Original
|
IXFA76N15T2
IXFP76N15T2
IXFH76N15T2
O-263
O-220AB
O-247
IXFA76N15T2
76N15T2
IXFP76N15T2
|
PDF
|
PC MOTHERBOARD IBM BARBADOS
Abstract: APC UPS CIRCUIT DIAGRAM ibm barbados motherboard PC MOTHERBOARD BARBADOS IBM APC UPS es 500 CIRCUIT DIAGRAM inverter welding machine circuit board UPS APC CIRCUIT manual repair offline ups 600 va APC back UPS RS 800 APC Back ES 500 UPS
Text: Embedded Modem + Internet Applications MT5634SMI-IP Developer’s Guide ModemModule ModemModule IP Developer’s Guide Embedded Modem + Internet Applications MT5634SMI-IP PN S000241B, Revision B 6/25/02 Copyright This publication may not be reproduced, in whole or in part, without prior expressed written permission from MultiTech Systems, Inc. All rights reserved.
|
Original
|
MT5634SMI-IP
S000241B,
22bis
42bis
PC MOTHERBOARD IBM BARBADOS
APC UPS CIRCUIT DIAGRAM
ibm barbados motherboard
PC MOTHERBOARD BARBADOS IBM
APC UPS es 500 CIRCUIT DIAGRAM
inverter welding machine circuit board
UPS APC CIRCUIT
manual repair offline ups 600 va
APC back UPS RS 800
APC Back ES 500 UPS
|
PDF
|
gs 1117 ax
Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions
|
OCR Scan
|
IXFH/IXFM21
IXFH26N50
21N50
24N50
26N50
gs 1117 ax
1XFH
Diode SMD SJ 97
Diode SMD SJ 24
Diode SMD SJ 0B
|
PDF
|
DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
|
OCR Scan
|
AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
|
PDF
|
1XFH12n100
Abstract: transistor 13n80
Text: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
|
OCR Scan
|
4bflb22b
1532A
200ns)
IXFH12N100
IXFH10N100
IXFM12N100
IXFM10N100
1XFH12n100
transistor 13n80
|
PDF
|
|
|