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Littelfuse Inc IXFB30N120P MOSFET N-CH 1200V 30A PLUS264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFB30N120P	Tube	317		1	1 $47.05 10 $47.05 100 $36.8008 1000 $36.8008 10000 $36.8008	Buy Now
IXYS Corporation IXFB30N120P MOSFET 30 Amps 1200V 0.35 Rds
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Mouser Electronics	IXFB30N120P		798			1 $46.8 10 $41.93 100 $35.33 1000 $35.33 10000 $35.33	Buy Now
TTI	IXFB30N120P	Tube			300	1 - 10 - 100 - 1000 $32.53 10000 $32.53	Buy Now
TME	IXFB30N120P				1	1 $45.18 10 $40.56 100 $37.87 1000 $37.87 10000 $37.87	Get Quote

IXFB30N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IXFB30N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 30A PLUS264		Original	PDF

IXFB30N120P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXFB30N120P Abstract: No abstract text available Text: Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET VDSS = 1200 V ID25 = 30 A Ω RDS on ≤ 350 mΩ ≤ 300 ns trr N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C VGSS Maximum Ratings 1200 V Continuous	Original	PDF	IXFB30N120P PLUS264TM 30N120P IXFB30N120P
nf950 Abstract: ixFB30N120P 30N120 30N120P Text: IXFB30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D nf950 ixFB30N120P 30N120
30N120P Abstract: mosfet IXFB 30N120P IXFB30N120P nf950 Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFB30N120P 300ns PLUS264TM 30N120P 1-07-A mosfet IXFB 30N120P IXFB30N120P nf950
Untitled Abstract: No abstract text available Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB30N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	PDF	IXFB30N120P 300ns PLUS264TM 100ms 30N120P 2-12-10-D
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
1200 volt mosfet Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET	Original	PDF	000-1200V IXFB30N120P IXFL30N120P IXFN30N120P IXFL32N120P IXFN32N120P PluS220 IXFV110N10PS 1200 volt mosfet 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P