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    IXFB210N20P Search Results

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    IXFB210N20P Price and Stock

    Littelfuse Inc IXFB210N20P

    MOSFET N-CH 200V 210A PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFB210N20P Tube 19 1
    • 1 $24.14
    • 10 $24.14
    • 100 $22.0172
    • 1000 $22.0172
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    Newark IXFB210N20P Bulk 300
    • 1 -
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    • 1000 $23.08
    • 10000 $23.08
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    IXYS Corporation IXFB210N20P

    MOSFETs 210 Amps 200V 0.0105 Rds
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    Mouser Electronics IXFB210N20P
    • 1 -
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    • 1000 $28.47
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    TTI IXFB210N20P Tube 300
    • 1 -
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    • 1000 $22.27
    • 10000 $22.27
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    TME IXFB210N20P 1
    • 1 $35.2
    • 10 $27.87
    • 100 $26.02
    • 1000 $26.02
    • 10000 $26.02
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    New Advantage Corporation IXFB210N20P 27 1
    • 1 -
    • 10 $51.39
    • 100 $47.96
    • 1000 $47.96
    • 10000 $47.96
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    IXYS Integrated Circuits Division IXFB210N20P

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    Bristol Electronics IXFB210N20P 100 1
    • 1 $30
    • 10 $30
    • 100 $25.386
    • 1000 $25.386
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    Quest Components IXFB210N20P 80
    • 1 $32.5
    • 10 $32.5
    • 100 $28.75
    • 1000 $28.75
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    Ozdisan Elektronik IXFB210N20P 34
    • 1 $38.60464
    • 10 $38.60464
    • 100 $36.0791
    • 1000 $36.0791
    • 10000 $36.0791
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    IXFB210N20P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXFB210N20P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 210A PLUS264 Original PDF

    IXFB210N20P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXFB210N20P 200ns PLUS264TM 100ms 210N20P 5-10-A

    IXFB

    Abstract: IXFB210N20P
    Text: IXFB210N20P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		PDF IXFB210N20P 200ns PLUS264TM 100ms 210N20P 5-10-A IXFB IXFB210N20P

    IXFB210N20P

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB210N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB210N20P 200ns PLUS264TM 100ms 210N20P IXFB210N20P