IXGH30N60B
Abstract: IXGT30N60B
Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms
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IXGH30N60B
IXGT30N60B
IC110
O-247
O-268
IXGH30N60B
IXGT30N60B
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms
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Original
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IXGH30N60B
IXGT30N60B
IC110
O-247
O-268
IXBH30N60BU1
O-268AA
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14055B
Abstract: No abstract text available
Text: Hi PerFAST IGBT IXGH30N60B IXGT30N60B CES ^C25 VCE sat tfi = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Test Conditions Maximum Ratings V CES T j = 2 5 cC to 1 5 0 °C 600 V V CGR T ,J = 25° C to 150° C; R CaE „ = 1 MQ 600 V V GES Continuous
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OCR Scan
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IXGH30N60B
IXGT30N60B
O-268
-247A
14055B
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L-1047
Abstract: No abstract text available
Text: □ IXYS HiPerFAST IGBT IXGH30N60B IXGT30N60B VC ES ^C25 V CE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data Symbol Maximum Ratings Test Conditions vv C E S Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous
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OCR Scan
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IXGH30N60B
IXGT30N60B
13/10Nm/lb
O-247
O-268
L-1047
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PDF
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT IXGH30N60B IXGT30N60B vCES ^C25 vCE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data ÒB Symbol Test Conditions VCES Tj =25°Cto150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 Mft 600 V vGES vGEM Continuous ±20 V Transient ±30
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OCR Scan
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IXGH30N60B
IXGT30N60B
Cto150
O-247
O-268
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