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    ITT8507 Search Results

    ITT8507 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ITT8507D M/A-COM 6W Power Amplifier Die (13.0 - 14.5 GHz) Original PDF
    ITT8507FN M/A-COM 4W Power Amplifier (12.5 - 14.5 GHz) Original PDF
    ITT8507FP M/A-COM 4W Power Amplifier (12.5 - 14.5 GHz) Original PDF

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    ITT8507D

    Abstract: No abstract text available
    Text: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION FEATURES • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50Ω Input/Output Impedance Self-Aligned MSAG MESFET Process


    Original     		PDF ITT8507D ITT8507D

    gsat

    Abstract: GaAs MESFET ITT
    Text: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 FN / FP ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN


    Original     		PDF ITT8507 8507FN 8507FP gsat GaAs MESFET ITT

    Untitled

    Abstract: No abstract text available
    Text: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN RFIN


    Original     		PDF ITT8507 8507FN 8507FP ITT8507

    Untitled

    Abstract: No abstract text available
    Text: 6W Power Amplifier Die 13.0 – 14.5 GHz ITT8507D ADVANCED INFORMATION Features • • • • • Broadband Performance 20% Typical Power Added Efficiency at P1dB 17 dB Typical Gain at P1dB 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process


    Original     		PDF ITT8507D ITT8507D