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    Abstract: GaAs MESFET ITT
    Text: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 FN / FP ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN


    Original     		PDF ITT8507 8507FN 8507FP gsat GaAs MESFET ITT

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    Abstract: No abstract text available
    Text: 4W Power Amplifier 12.5 – 14.5 GHz ITT8507 ADVANCED INFORMATION FEATURES • • • • 20% Typical Power Added Efficiency High Linear Gain: 17 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8507FN RFIN


    Original     		PDF ITT8507 8507FN 8507FP ITT8507