varicap diode bb122
Abstract: BB122 Varicap bb122 DIODE AA143 germanium diode itt BB121 AA143 BB121B varicap diode tv tuner AA143 ITT
Text: ITT Semiconductors Diodes Germanium Gold Bonded Diodes— Type DK For fast sw itching applications REFEREN CE T A B L E VRM If Code V mean DK13 DK14 DK15 DK19 DK20 DK21 50 80 100 25 70 8.0 120 120 120 — 80 — mA pk 250 250 250 110 100 30 surge 500 500 500
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100mA
1380E
1379B
1381C
160at60Â
1383X
1386D
AA143
14E08E
AA144
varicap diode bb122
BB122
Varicap bb122
DIODE AA143
germanium diode itt
BB121
BB121B
varicap diode tv tuner
AA143 ITT
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Aromat TQ2E-5V
Abstract: TQ2E-5V l4097 VAC-T60403 TQ2E aromat relay diodo Zener 4.1v dr 25 germanium diode LIMING RELAY T60403-L4096
Text: CMOS ST-BUS FAMILY IVIITEL MT8930C Subscrib S E M IC O N D U C T O R Features • ISSUE3 ETS 300-012, C C ITT 1.430 and ANSI T 1 .605 S/T interface O rdering Inform ation MT8930CE 28 Pin Plastic DIP MT8930CP 44 Pin PLCC -40°C to +85°C Full-duplex 2B+D, 192 kbit/s transm ission
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MT8930C
General-10
Aromat TQ2E-5V
TQ2E-5V
l4097
VAC-T60403
TQ2E
aromat relay
diodo Zener 4.1v
dr 25 germanium diode
LIMING RELAY
T60403-L4096
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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ircD376
BD234
VT854,
VT855â
VT854*
iTT44,
BZX79-C24,
BZX83-C24,
BZX88-C24
sx3704
BRC157
BRC-116
Germanium Diode aa143
1n4148 ITT
TRANSISTOR BC147
BC107/spice model bf199
BY238
SN76226DN
tungsram
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2N1671B
Abstract: 2N1671 2N1671A 160 germanium transistor 2N1671-2N1671A 2N1671C Germanium Power Devices 029T UJ-01 2NI67
Text: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR The| G PD • Unijunction T ran sistor is a three term inal device having a stable “N ” type negative resistance ch arac teristic over a wide tem perature range. A stable peak point voltage, a low peak point
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2N1671
2N1671A
2N1671-2N1671A)
2N1671B)
3CI47375
G000742
2N1671B
160 germanium transistor
2N1671-2N1671A
2N1671C
Germanium Power Devices
029T
UJ-01
2NI67
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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2N1907
Abstract: 2n1908 A97T Texas Germanium PW 2N GERMANIUM PNP LOW POWER TRANSISTORS 2NI907 Germanium power Germanium PNP - Low Power Transistors
Text: TYPES 2NI907, 2N1908 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS Zz for z : p s MILITARY AND INDUSTRIAL APPLICATIONS mechanical data These transistors are in precision w elded, herm etically sealed enclosures. The mounting base provides an
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2NI907,
2N1908
DC-11
2N1907
A97T
Texas Germanium
PW 2N
GERMANIUM PNP LOW POWER TRANSISTORS
2NI907
Germanium power
Germanium PNP - Low Power Transistors
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Cv7003
Abstract: Newmarket Transistors cv7042 OC71 cv7004 CV 7085 OC72 OA47 germanium oc77 OA91
Text: Newmarket Semiconductors Diodes/Germanium Alloy Power Transistors P N P Germanium Alloy Power Transistors Outline drawing No. M Ap p lies. To-3 . R E FE R E N C E T A B L E Maxim um ratings. C h aracte ristics T . mb = 25° C, Cad* BVc eo BVCbo BVebo *cm
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2772SC
7726A
27727X.
34768X
GET103
31419X
BS9300-C084)
31428H
GET116
31420B
Cv7003
Newmarket Transistors
cv7042
OC71
cv7004
CV 7085
OC72
OA47 germanium
oc77
OA91
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AD149
Abstract: ad 149 valvo transistoren valvo OC 74 germanium transistor valvo oc 26 valvo transistor valvo transistoren germanium AD-149 valvo germanium
Text: AD 149 GERMANIUM - PNP - NF - LEISTUNGSTRANSISTOR Mechanische Da ten; Gehäuse: Metall, JEDEC T0-3 3 A 2 DIN 41 872 Der Kollektor ist mit dem Gehäuse leitend verbunden. Für isolierten Einbau können Gl immerscheibe Typ P und Isolier buchsen (Typ C) gelie
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-0t25
AD149
ad 149
valvo transistoren
valvo
OC 74 germanium transistor
valvo oc 26
valvo transistor
valvo transistoren germanium
AD-149
valvo germanium
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GM10HS
Abstract: GM7HS S20E Germanium power 3T47375 GM2HS Germanium itt
Text: GERMANIUM POWER DE V I C E S 20E D 3=147375 D000535 7 V-41-41 Ge PHOTODETECTOR Fig 3-1 Typical Specifications at Room Temperative Ge Photodetector ACTIVE DIA. TYPE SPEC TR A L RESPO N SE MM (m) L DARK V (v) R E V E R S E 1UNT R* VOLTAGE C 0R R EN T RESÌSTA NCEKQ
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D000535
GM10HS
GM7HS
S20E
Germanium power
3T47375
GM2HS
Germanium itt
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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16C70
Abstract: J16D thermistor inas detector inas judson PA-100 Germanium itt
Text: J16TE Thermoelectrically Cooled Germanium Detectors judson tach-nalogiea J16TE2 Series 2-Stage Thermoelectrically Cooled Ge General J16TE Series detectors are Judson's high-quality Ge photodiodes mounted on thermoelectric coolers for reduced dark current, improved sensitivity and superior
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J16TE
J16TE
J16TE2
4C-70
16C-70
32C-70
4C-60
16C-60
16C70
J16D
thermistor inas
detector inas
judson PA-100
Germanium itt
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2m137
Abstract: 2N1310 2n1908 2N404 transistor 2N130S 2N526 2N1190 2N32 2N160 2N241A
Text: IN TEX/ SEMITRONICS CORP E 7E D • 4fibei a 4fa GGOQETe T -Z 7 -O I 1 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ; Trinsittdt: Polarity ■mm.-: im* i Maximum Miximum V Typical Giln HFE Power (W) VCB
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ci24t
N1086
J2N1087
2N169
S50I6Ã
2m137
2N1310
2n1908
2N404 transistor
2N130S
2N526
2N1190
2N32
2N160
2N241A
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lN34A
Abstract: Germanium itt
Text: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap
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1N34A
1N38A
1N388
lN34A
Germanium itt
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2N404
Abstract: 2N404 transistor OC 74 germanium transistor germanium transistor 2n404a 2N404A J971 2N404 JAN
Text: MIL -S-19500/20C 22 March .1971 _ SUPERSEDING MIL -S -195 0 0 /2 OB 23 October 1964 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, LOW-POWER TYPES 2N404 AND 2N404A T his sp ecification is mandatory for usg by all D ep artm ents and A gen cies of the Departm ent of D efen se .
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-S-19500/20C
2N404
2N404A
2N404A
2N404.
-19500/20C
MIL-S-19500,
MIL-S-19500
2N404 transistor
OC 74 germanium transistor
germanium transistor 2n404a
J971
2N404 JAN
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transistor WL 431
Abstract: 2N700A BUV pnp 50a MW1131
Text: M IL-S-19500/123A EL 12 Decokber 1966 SUPERSEDING MIL -S—19500/123(SigC) 1 July 1960 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR PNP, GERMANIUM TYPE 2N700A 1. SCOPE 1.1 Scope. - This specification coveKthe detail requirements for a germanium, PNP,
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MIL-S-19500/123A
-S-19500/123
2N700A
-65to
70MHz
5961-A085
transistor WL 431
2N700A
BUV pnp 50a
MW1131
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army sc-c-179495
Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De partments and Agencies o f the Department o f Defense.
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MIL-S-19500/44D
MIL-S-19500/44C
2N428
000-hour
MIL-S-19500,
MIL-S-19500
army sc-c-179495
2N426
2N428
germanium transistor ac 127
STT 433
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pnp germanium transistor
Abstract: boonton 91-6c
Text: M IL -S-19500/77C 6 March 1968 SUPERSEDING M IL -T -19500/77B 5 Ju ly 1961 See 6 . 3. MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE, TRANSISTOR, P N P , GERMANIUM, LOW-POWER m tm w 1 lJtTC j oxto n o £ 1N O Î 7U T his sp e cific atio n is m an d ato ry fo r u se by a ll D e p a rt
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MIL-S-19500/77C
19500/77B
pnp germanium transistor
boonton 91-6c
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TO1C
Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
Text: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65
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2K337S
2K3632
2N3733
T0-60
TQ-60
2N3866
N3924
2N392B
-2N3927
2N401Ã
TO1C
2N2188
IN404
2N2482
IN392
2N4040/A
2N994
INTEX
2NB642
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2N236A
Abstract: 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214
Text: . • ■ _ m M ô b^ EM b 0 0 0 0 2 1 3 0 H 7^;33" ° ¡ J E iT lltrO n SEMICONDUCTORS IN TE X/ S E N I T R O N I C S CORP S e m it r o n ic s C o r p . 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power
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2N155
2N156
2N158
2N158A
2N173
T0-13
2N174
2N176
2N234A
2N236A
2N458
2N554
2N2148
2N511
2n418
2N1203
2N3614
2n1021
2N214
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2N1227
Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
Text: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation
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2N155
2N156
2N158
2N158A
2N173
T0-13
2N174
2N176
2N234A
2N1227
2M214
2N1202
1j63
2N2148
2NS40
2N511
2N236A
2N420
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dr 25 germanium diode
Abstract: 1N3666 A11SC U1 4011
Text: 1 INCH-POUND 1 HIL-S-19500/226B n . i i i n p TQQn S B P f R S n i # -MIL-S-i9500/2z6A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, GERMANIUM. SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV T h is s p e c i f i c a t i o n i s approved f o r use by a l l D ep art
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MIL-S-19500/226B
MIL-S-19500/226A
1N3666
MIL-S-19500.
dr 25 germanium diode
A11SC
U1 4011
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2N1203
Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
Text: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation
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2N155
2N156
2N158
2N158A
2N173
T0-13
2N174
2N176
2N234A
2N1203
pnp germanium to36
2N1545
2N214
2N3312
2N3614
2N1560
2N1552
2N511
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4L3052
4L3056
wiring diagram audio amplifier ic 6283
germanium
Transistor Shortform Datasheet & Cross References
halbleiter index transistor
2N5160 MOTOROLA
transistor ITT 2907
1N5159
2N 5574
inverter welder 4 schematic
diagrams de ic lg 8838
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