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    ITS13C06

    Abstract: ITS13C06P ITS13C06B
    Text: ITS13C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation Supersedes February 1998 version 2.2 The ITS13C06 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r low pow er dissipation in a w ide range of high voltage


    OCR Scan     		PDF ITS13C06 DS4738 ITS13C06 ITS13C06P ITS13C06B

    ITS13C06

    Abstract: ITS13C06P ITS13C06B ITS13 T0247 26-A10
    Text: ITS13C06 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes February 1998 version 2.2 The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage


    OCR Scan     		PDF ITS13C06 DS4738 ITS13C06 ITS13C06P ITS13C06B ITS13 T0247 26-A10