POWERLINE 4 PRO
Abstract: No abstract text available
Text: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4738-2.1 ITS13C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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DS4738-2
ITS13C06
ITS13C06
POWERLINE 4 PRO
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ITS13C06
Abstract: ITS13C06P ITS13C06B
Text: ITS13C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation Supersedes February 1998 version 2.2 The ITS13C06 is a robust n-channel, enhancem ent m ode insulated gate bipolar tra n sisto r IGBT designed fo r low pow er dissipation in a w ide range of high voltage
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ITS13C06
DS4738
ITS13C06
ITS13C06P
ITS13C06B
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ITS13C06
Abstract: ITS13C06P ITS13C06B ITS13 T0247 26-A10
Text: ITS13C06 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes February 1998 version 2.2 The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage
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OCR Scan
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PDF
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ITS13C06
DS4738
ITS13C06
ITS13C06P
ITS13C06B
ITS13
T0247
26-A10
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