ATP108
Abstract: IT1518 ena1604
Text: ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET ATP108 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
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ATP108
ENA1604
PW10s)
PW10s,
A1604-4/4
ATP108
IT1518
ena1604
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a1603
Abstract: ATP107
Text: ATP107 Ordering number : ENA1603 SANYO Semiconductors DATA SHEET ATP107 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
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ATP107
ENA1603
PW10s)
PW10s,
A1603-4/4
a1603
ATP107
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a1712 mosfet
Abstract: A1712
Text: Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •
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ENA1712A
ATP214
4850pF
PW10s)
PW10s,
L100H,
A1712-7/7
a1712 mosfet
A1712
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1754A ATP112 P-Channel Power MOSFET http://onsemi.com –60V, –25A, 43mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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ENA1754A
ATP112
1450pF
PW10s)
PW10s,
--10V,
--13A
A1754-7/7
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a1711
Abstract: A1711-2 ENA1711 ATP114 A1711-1 A1711-3
Text: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance
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ATP114
ENA1711
4000pF
A1711-4/4
a1711
A1711-2
ENA1711
ATP114
A1711-1
A1711-3
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ATP113
Abstract: No abstract text available
Text: ATP113 Ordering number : ENA1755 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive • • Input Capacitance Ciss=2400pF(typ.) Halogen free compliance
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ATP113
ENA1755
2400pF
A1755-4/4
ATP113
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Untitled
Abstract: No abstract text available
Text: ATP107 Ordering number : ENA1603A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP107 General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive
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ATP107
ENA1603A
A1603-7/7
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ATP113
Abstract: No abstract text available
Text: ATP113 Ordering number : ENA1755A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=2400pF(typ.)
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ENA1755A
ATP113
2400pF
PW10s)
PW10s,
A1755-7/7
ATP113
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Untitled
Abstract: No abstract text available
Text: ATP107 Ordering number : ENA1603 SANYO Semiconductors DATA SHEET ATP107 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
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Original
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PDF
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ENA1603
ATP107
PW10s)
PW10s,
--10V,
A1603-4/4
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Untitled
Abstract: No abstract text available
Text: ATP113 Ordering number : ENA1755 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive • • Input Capacitance Ciss=2400pF(typ.) Halogen free compliance
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ENA1755
ATP113
2400pF
PW10s)
PW10s,
A1755-4/4
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ATP112
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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ATP112
ENA1754
1450pF
A1754-4/4
ATP112
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A1711
Abstract: No abstract text available
Text: Ordering number : ENA1711A ATP114 P-Channel Power MOSFET http://onsemi.com –60V, –55A, 16mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4000pF(typ.) Halogen free compliance
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ENA1711A
ATP114
4000pF
PW10s)
PW10s,
--15V,
--28Aere
A1711-7/7
A1711
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Untitled
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive • • Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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ENA1754
ATP112
1450pF
PW10s)
PW10s,
A1754-4/4
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1603A ATP107 P-Channel Power MOSFET http://onsemi.com –40V, –50A, 17mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications
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ENA1603A
ATP107
PW10s)
PW10s,
--10V,
--25A
L200H,
A1603-7/7
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A1711
Abstract: ATP114 A17113 A1711-2 A1711-3
Text: ATP114 注文コード No. N A 1 7 1 1 三洋半導体データシート N ATP114 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=12mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=4000pF(typ.)
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ATP114
4000pF
IT15710
IT15512
A1711-3/4
IT15513
A1711
ATP114
A17113
A1711-2
A1711-3
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A1712
Abstract: a1712 mosfet
Text: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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ATP214
ENA1712A
4850pF
A1712-7/7
A1712
a1712 mosfet
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Untitled
Abstract: No abstract text available
Text: ATP108 Ordering number : ENA1604A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP108 General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive
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ATP108
ENA1604A
A1604-7/7
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a1712
Abstract: a1712 mosfet a1712-1 ENA1712
Text: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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ENA1712
ATP214
4850pF
PW10s)
PW10s,
A1712-4/4
a1712
a1712 mosfet
a1712-1
ENA1712
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Untitled
Abstract: No abstract text available
Text: ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET ATP108 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
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Original
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PDF
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ENA1604
ATP108
PW10s)
PW10s,
--15V,
A1604-4/4
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a1712 mosfet
Abstract: A1712
Text: ATP214 Ordering number : ENA1712A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.)
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ATP214
ENA1712A
4850pF
A1712-7/7
a1712 mosfet
A1712
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1604A ATP108 P-Channel Power MOSFET http://onsemi.com –40V, –70A, 10.4mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications
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ENA1604A
ATP108
PW10s)
PW10s,
--15V,
--35A
L100H,
A1604-7/7
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A1755
Abstract: ATP113 ATPAK
Text: ATP113 注文コード No. N A 1 7 5 5 三洋半導体データシート N ATP113 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=22.5mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=2400pF(typ.)
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ATP113
2400pF
IT15610
A1755-3/4
IT15611
IT15179
A1755-4/4
A1755
ATP113
ATPAK
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M4563
Abstract: ATP112
Text: ATP112 注文コード No. N A 1 7 5 4 三洋半導体データシート N ATP112 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=33mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=1450pF(typ.)
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ATP112
1450pF
--10V
IT15592
IT15599
A1754-3/4
M4563
ATP112
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a1712
Abstract: a1712 mosfet a1712 transistor a1712-1 ATP214 ENA1712 A1712-4
Text: ATP214 Ordering number : ENA1712 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP214 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive • • Input Capacitance Ciss=4850pF(typ.) Halogen free compliance
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ATP214
ENA1712
4850pF
PW10s,
PW10s)
A1712-4/4
a1712
a1712 mosfet
a1712 transistor
a1712-1
ATP214
ENA1712
A1712-4
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