mosfet irfp 250 N
Abstract: IRFP 260 M w46a Irfp260 transistor irfp
Text: Standard Power MOSFET IRFP 260 VDSS ID cont RDS(on) = 200 V = 46 A Ω = 55 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient
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NTC 4,7
Abstract: ntc 4.7 NTC Inrush Current Limiters Thermistor ntc 2.5 ohm Thermistor cross reference IEC 68-2-6 NTC 2.5 UA 741 datasheet NTC 4,7 S M i2 200-5
Text: NTC Thermistors Inrush current limiters Contents NTC General Characteristics p. 2 NTC as inrush current limiter p. 4 How to order p. 5 Technical data p. 6 Taping characteristics p. 14 Packaging p. 16 Manufacturing process and quality assurance p. 18 Reliability
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Untitled
Abstract: No abstract text available
Text: Type BSC097N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested VDS 60 9.7 RDS on ,max • Superior thermal resistance • N-channel 1) • Qualified according to JEDEC for target applications
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BSC097N06NS
IEC61249-2-21
097N06NS
10angerous
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ZXMN3B04N8
Abstract: ZXMN3B04N8TA ZXMN3B04N8TC 3b04
Text: ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN3B04N8
ZXMN3B04N8TA
ZXMN3B04N8TC
ZXMN3B04N8
ZXMN3B04N8TA
3b04
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Untitled
Abstract: No abstract text available
Text: ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V BR DSS=30V : RDS(on)=0.025 ; ID= 8.9A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN3B04N8
ZXMN3B04N8TA
ZXMN3B04N8TC
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ADG1608
Abstract: D0831 ADG1608BCPZ-REEL71 ADG1608BCPZ-REEL7
Text: 4.5 Ω RON, 4-/8-Channel ±5 V,+12 V, +5 V, and +3.3 V Multiplexers ADG1608/ADG1609 FEATURES FUNCTIONAL BLOCK DIAGRAMS 4.5 Ω typical on resistance 1 Ω on-resistance flatness Up to 470 mA continuous current ±3.3 V to ±8 V dual-supply operation 3.3 V to 16 V single-supply operation
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ADG1608/ADG1609
16-lead
16-lead,
ADG1608
ADG1609
ADG1608
D0831
ADG1608BCPZ-REEL71
ADG1608BCPZ-REEL7
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Untitled
Abstract: No abstract text available
Text: 4.5 Ω RON, 4-/8-Channel ±5 V,+12 V, +5 V, and +3.3 V Multiplexers ADG1608/ADG1609 FUNCTIONAL BLOCK DIAGRAMS FEATURES 4.5 Ω typical on resistance 1 Ω on-resistance flatness Up to 470 mA continuous current ±3.3 V to ±8 V dual-supply operation 3.3 V to 16 V single-supply operation
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ADG1608/ADG1609
16-lead
16-lead,
ADG1608
ADG1609
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50
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44N50
48N50
48N50
O-264
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Untitled
Abstract: No abstract text available
Text: AH292 LOW VOLTAGE HALL-EFFECT SMART FAN MOTOR CONTROLLER General Description Features • • • • • • • On Chip Hall Sensor Rotor-Locked Shutdown Automatically Restart Frequency Generator FG Output Built-in Zener Protection for Output Driver Operating Voltage: 1.8V~5.75 V
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AH292
OT89-5L
AH292
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d1505
Abstract: No abstract text available
Text: SIEMENS BAR 64. Silicon PIN Diode • • • High voltage current controlled R F resistor for R F attenuator and swirches Freqency range above 1 MHz • • Low resistance and short carrier lifetime For frequencies up to 3 G H z Type BAR B AR B AR BAR 64
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Q62702-A1041
Q62702-A1010
Q62702-A1042
Q62702-A1043
OT-23
235b05
012QE17
BAR64
BAR64-04
d1505
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSM 25 GB 120 D BSM 25 GAL 120 D IGBT Module Prelim inary D ata VCE = 1200 V / c = 2 x 35 A at r c = 25 C / c = 2 x 25 A at Tc = 80 *C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate
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C67076-A2109-
C67076-A2009-A2
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Untitled
Abstract: No abstract text available
Text: N AMER PH IL I P S / D I S C R E T E T> bbS3^31 00 30 4 5 5 550 • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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BUK436-60A/B
BUK436
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ISS 184 diode
Abstract: sml40m42bfn
Text: SEPIELAB PLC_ bOE D • 5133157 DOOOflöD flbT M S f l L B _ 4 MOS POWER = ^ = 'T "'3ci«'L'7 SEME LAB SML40M42BFN SML35M42BFN 400V 95.0A 0.042Q 350V 95.0A 0.0420 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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SML40M42BFN
SML35M42BFN
SML35M42BFN
0C830
MIL-STD-750
ISS 184 diode
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smd code 46n
Abstract: SPB46N03L smd diode 46A 46n03l
Text: SIEMENS SPP46N03L SPB46N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP46N03L Vfes 30 V b f lDS on @ VGS 46 A SPB46N03L 0.018 Q
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SPP46N03L
SPB46N03L
SPB46N03L
P-T0220-3-1
P-T0263-3-2
Q67040-S4147-A2
Q67040-S4743-A3
smd code 46n
smd diode 46A
46n03l
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max1851
Abstract: LF400 MAX183 MAX183ACNG MAX183ACWG MAX183BCNG MAX185 Diode N4148 MX584
Text: 19-3127; Rev.O; 4/91 High~Speed 12-B it A/D Converters W ith E x te rn al R eference Input _ Features ♦ 12-Bit Resolution and Accuracy ♦ Fast Conversion Times: MAX183-3tis MAX184 - 5lis MAX185 -10ÌLS ♦ Low 90mW Power Consumption
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12-Bit
MAX183/184/185
12-bit,
MAX183
10jis.
MAX185AEWG
MAX185BEWG
MAX185AMRG
-55nC
max1851
LF400
MAX183ACNG
MAX183ACWG
MAX183BCNG
MAX185
Diode N4148
MX584
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LF400
Abstract: No abstract text available
Text: yi/iyjxiyi/i 19-3127; Rev.O; 4/91 High-Speed 12-Bit A/D Converters With External Reference Input _ Features ♦ 12-Bit Resolution and Accuracy The MAX183/184/185 require an external -5V reference. A buffered reference input minimizes reference-current
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12-Bit
MAX183/184/185
MAX183
MAX184
AX185
-10ns
MAX185BEWG
MAX185AMRG
MAX185BMRG
LF400
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SOT457 N-Channel FD
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES BSH107 QUICK REFERENCE DATA SYMBOL d • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package V qs = 20 V
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BSH107
BSH107
OT457
OT457
SOT457 N-Channel FD
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NP10N45DHB
Abstract: MP-25 NP10N45CHB NP10N45EHB
Text: PRELIMINARY PRODUCT INFORMATION M O S Field Effect Power Transistor NP10N45CHB,NP10N45DHB,NP10N45EHB SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
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NP10N45CHB
NP10N45DHB
NP10N45EHB
1600pF
MP-25
NP10N45EHB
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LF400
Abstract: No abstract text available
Text: 19-3127, Rev.O; 4/91 J V \J V X \J V \ H igh-S peed 12-B it A/D C o nverters W ith E x te rn a l R e fe re n c e In p u t _ F eatures ♦ 12-Bit Resolution and Accuracy The MAX183/184/185 require an external -5V reference. A buffered reference input minimizes reference-current
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MAX183
AX184-
MAX183/184/185
MIL-STD-883.
LF400
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0030456
Abstract: 100-P BUK436-60A BUK436-60B
Text: N AUER P H I L I P S / D I S C R E T E J> b^E • bbSBTai 0D3D455 Philips Semiconductors Power MOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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0D3D455
BUK436-60A/B
BUK436
bbS3T31
S/V-10/
0030456
100-P
BUK436-60A
BUK436-60B
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BUK437-500B
Abstract: J812 DD304 HIA TRANSISTOR
Text: N Afl ER PHILIPS/DISCRETE bTE T> m bbS3R31 □Q3DM6S Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3R31
BUK437-500B
btS3T31
BUK437-500B
J812
DD304
HIA TRANSISTOR
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025Q
Abstract: MS-012AA ZXMN3B04N8 ZXMN3B04N8TA ZXMN3B04N8TC LD86A ls32a
Text: ADVANCED INFORMATION ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V B R D SS =30V : RDS(O n)=0.025Q; lD=8.6A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN3B04N8
ZXMN3B04N8TA
ZXMN3B04N8TC
D-81673
025Q
MS-012AA
ZXMN3B04N8
LD86A
ls32a
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BSM25GB120D
Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
Text: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge
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0235bG5
C67076-A2109-A2
C67076-A2009-A2
S23SbDS
DGMSfi22
BSM25GB120D
C160
SC10
siemens igbt BSM 150 Gb 160 d
SIEMENS ks
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Untitled
Abstract: No abstract text available
Text: Technical D a ta _ CD54/74AC257, CD54/74AC258 CD54/74ACT257, CD54/74ACT258 257 258 Quad 2-Input Multiplexer with 3-State Outputs C D54/74AC/ACT 257 C D54/74AC/ ACT 258 92 CS - 4 2S 6 2 FUNCTIONAL DIAGRAM Advance Information Non-Inverting Outputs
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CD54/74AC257,
CD54/74AC258
CD54/74ACT257,
CD54/74ACT258
D54/74AC/ACT
D54/74AC/
RCA-CD54/74AC257
CD54/74ACT257
CD54/74ACT258
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