Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ISB35 Search Results

    ISB35 Datasheets (113)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ISB35000 STMicroelectronics 0.5 MICRON HCMOS ARRAYS Original PDF
    ISB35000 Series STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-CC44 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-CC84 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-GQFP208 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-GQFP304 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-PGA300 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-PGA64 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-PowerQFP304 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-PowerQFP80 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-PQFP304 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-PQFP44 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-TQFP100 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35083-TQFP44 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-CC44 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-CC84 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-GQFP208 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF
    ISB35130-GQFP304 STMicroelectronics HCMOS STRUCTURED ARRAY Original PDF

    ISB35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ISB12000

    Abstract: signal path designer
    Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u lly in de p e n d en t p o we r an d g rou n d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		PDF ISB35000 ISB12000 signal path designer

    ISB35

    Abstract: No abstract text available
    Text: . 4 7.62 ISB35 1 2 1 2 6 5 3 4 6.4 ISB35 5 Dimensions in mm 6 3 8.6 8.8 DESCRIPTION 7.62 The ISB35 is a 1-Form B solid state relay in a 6 pin DIL package. The ISB35 utilises MOSFET technology that is optically coupled to a highly efficient GaAlAs infrared light emitting diode.


    Original     		PDF ISB35 ISB35 75kVRMS 100mA DC93074

    SGS-Thomson ball grid array

    Abstract: schematics power supply satellite receiver ISB35000 ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484
    Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u l ly i n de p en d en t p o we r an d g roun d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		PDF ISB35000 SGS-Thomson ball grid array schematics power supply satellite receiver ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484

    SGS-Thomson ball grid array

    Abstract: CB35000 ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver
    Text: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.


    Original     		PDF CB35000 SGS-Thomson ball grid array ISB35000 2M x 16 DPRAM signal path designer io out put buffer predriver

    transistor nd8

    Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
    Text: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.


    Original     		PDF ISB28000 transistor nd8 BT4R bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24

    IS210

    Abstract: IS211 IS214 IS215 IS216 IS216D ISPA06 ISA40
    Text: Optically Coupled MOSFET Relays Isocom offers a range of MOSFET relays with a miniature small outline package through to a dual channel 8 pin DIP package. The relays can be used in either an AC or DC mode and due to the MOSFET technology offer very high reliability. Several versions are available offering: low


    Original     		PDF ISDB35 ISPD40 1500Vrms IS210 IS211 IS214 IS215 IS216 IS216D ISPA06 ISA40

    CB12000

    Abstract: cd 4847 bt8c dc to ac inverter schematic CB22000 ld3p FD11S FD3S BUT12 BUT18
    Text: CB22000 SERIES HCMOS STANDARD CELL GENERAL DESCRIPTION FEATURES 0.7 micron, double layer metal HCMOS4T process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide. 2 - input NAND ND2P delay of 0.30 ns (typ)


    Original     		PDF CB22000 CB12000 cd 4847 bt8c dc to ac inverter schematic ld3p FD11S FD3S BUT12 BUT18

    7939-2

    Abstract: signal path designer CB35000 Series
    Text: CB35000 SERIES  HCMOS STANDARD CELLS PRELIMINARY DATA FEATURES • ■ ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS5S process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide.


    Original     		PDF CB35000 7939-2 signal path designer CB35000 Series

    DPRAM

    Abstract: 256K DPRAM ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484 ISB35666
    Text: DIGITAL SEMICUSTOM CIRCUITS SEA OF GATES - STRUCTURED ARRAYS ISB 35000 SERIES 0.5 micron, triple level metal HCMOS Technology. Typical delay 0.21ns for 2-input NAND gate GENERAL FEATURES • ■ ■ ■ ■ ■ 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance


    Original     		PDF

    moc3041 dimmer

    Abstract: tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh
    Text: Welcome to the Isocom Components information booklet! 4 Pin DIL & SMD Optocouplers 6 Pin DIL & SMD Optocouplers 8 Pin DIL & SMD Optocouplers 16 Pin DIL & SMD Optocouplers 8 & 16 Pin Symmetrical Terminal Configuration DIL & SMD Optocouplers Special Purpose 6 Pin DIL & SMD Optocouplers Triac & Schmitt Trigger


    Original     		PDF Unbeata140 PAA150 LAA100 LAA110 LAA126 LAA127 LAA120 LAA125 LCB110 LCB111 moc3041 dimmer tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF