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    Hubbell Wiring Device-Kellems ISB12W

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    Hubbell Wiring Device-Kellems ISB12EI

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    ISB12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K1B2816

    Abstract: No abstract text available
    Text: K1B2816B6M UtRAM Document Title 8Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target 0.1 Revised November 28, 2003 Advance - Added Full Page 256 word, Wrap Around Burst in burst length


    Original     		PDF K1B2816B6M 8Mx16 K1B2816

    ISB12000

    Abstract: signal path designer
    Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u lly in de p e n d en t p o we r an d g rou n d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		PDF ISB35000 ISB12000 signal path designer

    K1S32161CD-FI70

    Abstract: No abstract text available
    Text: K1S32161CD UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 04, 2004 Preliminary 1.0 Finalize - Added Lead Free Product April 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K1S32161CD 2Mx16 K1S32161CD K1S32161CD-FI70

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


    Original     		PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    EM51M256A-15P

    Abstract: Em51M256A-15 Etron Etron Technology ISB12 Em51m256
    Text: EtronTech Em51M256A 3.3V I/O 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Advanced CMOS Process


    Original     		PDF Em51M256A 28-Pin 300-mil 10ns/12ns/15ns 004MAX 10MAX EM51M256A-15P Em51M256A-15 Etron Etron Technology ISB12 Em51m256

    K1B6416B6C

    Abstract: UtRAM Density
    Text: K1B6416B6C UtRAM Document Title 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target March 11, 2004 Advance 0.1 Revised - Deleted Deep Power Down Mode support


    Original     		PDF K1B6416B6C 4Mx16 K1B6416B7C 54ball 55/Typ. 35/Typ. K1B6416B6C UtRAM Density

    K1S16161CA

    Abstract: K1S16161CA-I
    Text: Preliminary K1S16161CA UtRAM Document Title 1Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History 0.0 Draft Date Initial Draft Remark December 12, 2003 Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K1S16161CA 1Mx16 K1S16161CA 55/Typ. 35/Typ. K1S16161CA-I

    SGS-Thomson ball grid array

    Abstract: schematics power supply satellite receiver ISB35000 ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484
    Text: ISB35000 SERIES HCMOS STRUCTURED ARRAY PRELIMINARY DATA FEATURES F u l ly i n de p en d en t p o we r an d g roun d configurations for inputs, core and outputs. 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide


    Original     		PDF ISB35000 SGS-Thomson ball grid array schematics power supply satellite receiver ISB35083 ISB35130 ISB35166 ISB35208 ISB35279 ISB35389 ISB35484

    EM51256C-15P

    Abstract: em51256 Etron Technology EM51256C-10J
    Text: EtronTech Em51256C 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5 5 24


    Original     		PDF Em51256C 28-Pin 300-mil 10ns/12ns/15ns EM51256C-15P em51256 Etron Technology EM51256C-10J

    EM51L256A-15J

    Abstract: Etron Technology
    Text: EtronTech Em51L256A 3.3V 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5


    Original     		PDF Em51L256A 28-Pin 300-mil 10ns/12ns/15ns EM51L256A-15J Etron Technology

    K1S3216BCD

    Abstract: No abstract text available
    Text: K1S3216BCD UtRAM Document Title 2Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft November 02, 2004 Preliminary 1.0 Finalize Apri 06, 2005 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K1S3216BCD 2Mx16 K1S3216BCD

    Untitled

    Abstract: No abstract text available
    Text: ISB12000 SERIES CO N TIN UO US ARRAYS DATABOOK 1st ED ITIO N January 1990


    OCR Scan     		PDF ISB12000

    64X16 led matrix

    Abstract: TDA8172A 12v 400W AUDIO AMPLIFIER TEA2037 tda2824s TDA8214A CQFP-100 12v 40w tda2040 amplifier circuit tda2030 CQFP100
    Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SG S-THOMSON DATABOOKS DB O RDER CODE a 4 BIT MCU FAMILY ET9400 DBET9400ST/1


    OCR Scan     		PDF ET9400 EF6801/04/05 CB12000 ISB12000 ISB9000 ISB18000 ST6326/27/28/ ST6356/57/58 ST6340/42/44/46 64X16 led matrix TDA8172A 12v 400W AUDIO AMPLIFIER TEA2037 tda2824s TDA8214A CQFP-100 12v 40w tda2040 amplifier circuit tda2030 CQFP100

    256x16 eprom

    Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
    Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1


    OCR Scan     		PDF ET9400 EF6801/04/05 ISB12000 ISB18000 MKI48Z18 PHDIP28 MK48Z30, 256x16 eprom GS-2I5-D12 GS-D250M GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B

    SGS M114S

    Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
    Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C291A CY7C292A/CY7C293A £i SEMICONDUCTOR *& Reprogrammable 2048 x 8 PROM Features • C apable of w ithstanding > 2001V sta tic discharge • Windowed for reprogrammability • CMOS for optimum speed/power Product Characteristics • High speed — 20 ns commercial


    OCR Scan     		PDF CY7C291A CY7C292A/CY7C293A CY7C291 7C291A 7C293A) 7C292A) 91A-35PC CY7C291A-35DC CY7C293A-50DMB CY7C293A-50WMB

    z80 microprocessor

    Abstract: Q193 CB12000 16 bit mcu ST9040 SGS-Thomson MCU st10 microwave databook
    Text: SGS-THOMSON DATABOOKS DESCRIPTION 4 BIT MCU FAMILY ET9400 8 BIT MCU FAMILIES EF6801/04/05 16 BIT MPUs & ASSOCIATED PERIPHERALS AUDIO POWER and PROCESSING ICs AUTOMOTIVE PRODUCTS CB12000 SERIES STANDARD CELLS CB12000 SERIES STANDARD CELL MODULE GENERATORS ANALOG CELLS AND ARRAYS


    OCR Scan     		PDF ET9400 EF6801/04/05 CB12000 CB22000 ISB12000 ISB24000 ST9040 DBET9400ST/1 DB68XXST/1 z80 microprocessor Q193 16 bit mcu SGS-Thomson MCU st10 microwave databook

    Untitled

    Abstract: No abstract text available
    Text: QS72211, QS72221, QS72231, QS72241 PRELIMINARY Q High-Speed CMOS 512/1K/2K/4K x 9 Parallel Clocked FIFO <»72211 q! ” “1 , QS72241 FEATURES DESCRIPTION • • • • • The QS72211/221/231/241 are high-speed 512/1K/ 2K/4Kx9 parallel, clocked FIFOs, respectively. These


    OCR Scan     		PDF QS72211, QS72221, QS72231, QS72241 512/1K/2K/4K QS72211) QS72221) QS72231 QS72241 12-ns