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    K1B6416B6C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K1B6416B6C Samsung Electronics Original PDF

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    Catalog Datasheet MFG & Type Document Tags PDF

    UtRAM

    Abstract: K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H
    Text: Write method & Mode Change This Application Note is applied to below products. - K1B5616B2M, K1B5616BAM, K1B5616BBM - K1B2816B2A, K1B2816BAA, K1B2816BBA - K1B6416B6C, K1B3216BDD June. 2006 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD


    Original     		K1B5616B2M, K1B5616BAM, K1B5616BBM K1B2816B2A, K1B2816BAA, K1B2816BBA K1B6416B6C, K1B3216BDD 5555h) 5555h UtRAM K1B5616BBM K1B5616B2M K1B2816B2A K1B3216BDD K1B5616BAM K1B6416B6C 0000H PDF

    K1B6416B6C

    Abstract: UtRAM Density
    Text: K1B6416B6C UtRAM Document Title 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target March 11, 2004 Advance 0.1 Revised - Deleted Deep Power Down Mode support


    Original     		K1B6416B6C 4Mx16 K1B6416B7C 54ball 55/Typ. 35/Typ. K1B6416B6C UtRAM Density PDF