Untitled
Abstract: No abstract text available
Text: TO SHIBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4003F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.5CHz Typ. (3dB down, V CC = 2V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500MHz, V CC = 2V) • Operating Supply Voltage : V ( x = 2~3V
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TA4003F
500MHz,
500MHz.
IS22P
IS12P
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4003F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.5CHz Typ. (3dB down, V CC = 2V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500MHz, V CC = 2V) • Operating Supply Voltage : V ( x = 2~3V
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TA4003F
500MHz,
IS22P
IS12I2
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TA4004F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4004F V H F -U H F WIDE BAND AMPLIFIER FEATURES • Band W idth 1.2GHz Typ. (3dB down, V q q = 2V) • High Gain : |S2112 = 10.5dB (Typ.) (f=500MHz, V CC = 2V) • Operating Supply Voltage : V c c = 2—5V
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TA4004F
S2112
500MHz,
IS11P
IS21P
IS22P
IS12P
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors TA4003F Bipolar Linear Integrated Circuit Unit in mm VHF ~ UHF Wide Band Amplifier Features • Band Width 1,5CHz typ. .(3dB down, Vcc = 2V) • High Gain: IS2112 = 11 dB (typ.), f = 500MHz, Vc c = 2V) • Operating Supply Voltage : Vcc = 2 ~ 3V
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TA4003F
IS2112
500MHz,
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Ghz dB transistor
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 0G24aT7 3T4 * A P X N ANER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES Product specification b7E J> BFG94 PINNING • High power gain PIN • Low noise figure 1 emitter • Low intermodulation distortion 2 base •
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bbS3T31
0G24aT7
BFG94
OT223
Ghz dB transistor
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