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    IRRH Search Results

    IRRH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADC32RF83IRRHR Texas Instruments Dual-channel, 14-bit, 3-GSPS, single DDC/channel, RF-sampling wideband receiver and feedback IC 72-VQFN -40 to 85 Visit Texas Instruments
    ADC32RF83IRRHT Texas Instruments Dual-channel, 14-bit, 3-GSPS, single DDC/channel, RF-sampling wideband receiver and feedback IC 72-VQFN -40 to 85 Visit Texas Instruments Buy
    ADC32RF80IRRHR Texas Instruments Dual-channel, 14-bit, 3-GSPS, dual DDC/channel, RF-sampling wideband receiver and feedback IC 72-VQFN -40 to 85 Visit Texas Instruments
    ADS58J64IRRHT Texas Instruments Quad-channel, 14-bit, 1-GSPS telecom receiver and feedback IC 72-VQFN -40 to 85 Visit Texas Instruments Buy
    ADS58J64IRRHR Texas Instruments Quad-channel, 14-bit, 1-GSPS telecom receiver and feedback IC 72-VQFN -40 to 85 Visit Texas Instruments Buy
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    IRRH Price and Stock

    Texas Instruments ADS58J64IRRHT

    QUAD-CHANNEL, 14-BIT, 1-GSPS TEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ADS58J64IRRHT Reel 250
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    Mouser Electronics ADS58J64IRRHT
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    • 10000 $666.83
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    Texas Instruments ADS58J64IRRHR

    QUAD-CHANNEL, 14-BIT, 1-GSPS TEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ADS58J64IRRHR Reel 1,500
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    Mouser Electronics ADS58J64IRRHR
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    Texas Instruments ADC32RF83IRRHT

    DUAL-CHANNEL, 14-BIT, 3-GSPS, SI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ADC32RF83IRRHT Reel 250
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    Mouser Electronics ADC32RF83IRRHT
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    Texas Instruments ADC32RF80IRRHR

    DUAL-CHANNEL, 14-BIT, 3-GSPS, DU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ADC32RF80IRRHR Reel 1,500
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    • 10000 $1306.1224
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    Mouser Electronics ADC32RF80IRRHR
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    Texas Instruments ADC32RF80IRRHT

    DUAL-CHANNEL, 14-BIT, 3-GSPS, DU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ADC32RF80IRRHT Reel 250
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    • 1000 $1333.0721
    • 10000 $1333.0721
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    Mouser Electronics ADC32RF80IRRHT
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    • 10000 $1423.02
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    IRRH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ps2 CIRCUIT diagram

    Abstract: TCA 965 BP CMT58 CMT57 Hitachi DSA002730 k 1413
    Text: Hitachi 16-Bit Single-Chip Microcomputer H8S/2194 Series, H8S/2194C Series, H8S/2194 F-ZTAT , H8S/2194C F-ZTAT™ H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 H8S/2192, HD6432192 H8S/2191, HD6432191 H8S/2194C, HD6432194C, HD64F2194C, H8S/2194B, HD6432194B


    Original
    PDF 16-Bit H8S/2194 H8S/2194C H8S/2194, HD6432194, HD64F2194, H8S/2193, HD6432193 ps2 CIRCUIT diagram TCA 965 BP CMT58 CMT57 Hitachi DSA002730 k 1413

    Untitled

    Abstract: No abstract text available
    Text: SILICON DIFFUSED TYPE FAST RECOVERY RECTIFIER <j SWITCHING TYPE POWER SUPPLY APPLICATIONS. Unit in mm . Repetitive Peak Reverse Voltage : Vrr{,j=600V . Average Forward Current : If AV =1.5A . Very Fast Reverse-Recovery Time : trr=200ns (Max.) + MAXIMUM RATINGS


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    PDF 200ns 1R5JH45

    tc528126

    Abstract: TC528126B
    Text: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The


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    PDF TC52812GBJ/BZ 072-words 256-words TC528126BJ/BZ TC52812GB tc528126 TC528126B

    P546G

    Abstract: TLP546G E67149 TLP546 e6714
    Text: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO DE I TDTTESO DD17455 99D 17455 TLP546G GaAs IRED & PHOTO-THYRISTOR CONTROL IA(RHS) O f 120VAC LIKE. MOTOR CONTROLS. COtfTROLlER. COPIER. H O C ELECTRIC MACHINE. . . . . : IT <H>lS) • IA (Single Phase Pull Wave,


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    PDF DD17455 TLP546G 120VAC BVs-2500V E67149 P546G TLP546C. T2-60 3K-15kft TLP546G E67149 TLP546 e6714

    Untitled

    Abstract: No abstract text available
    Text: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70


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    PDF TMS416160, TMS416160P 576-WORD 16-BIT SMKS660-DECEMBER 416160/P-60 416160/P-70 416160/P-80

    Untitled

    Abstract: No abstract text available
    Text: 4M x 32 -Bit EDO-DRAM Module SMALL OUTLINE MEMORY MODULE HYM32 V4025G D-50/-60 HYM32V4025GDL-50/-60 Advanced Information • 72-Pin Small Outline Dual-in-Line Memory Module • 4 194 034 words by 32-bit organization • Hyper Page Mode - EDO - performance


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    PDF HYM32 V4025G D-50/-60 HYM32V4025GDL-50/-60 72-Pin 32-bit HYM32V4025GD

    DS20

    Abstract: msc23236c
    Text: O K I S em ic o n d u cto r M S C 23236C /C L -X X B S 20/PS 20 2,097,152-Word x 36-Bit DRA M M ODULE : FAST PAGE M O D E TYPE DESCRIPTION The OKI MSC23236C/CL-xxBS20/DS20 is a fully decoded 2,097,152-word x 36-bit CMOS Dynamic Random Access Memory M odule com posed of sixteen 4-Mb DRAMs 1M x 4 in SOJ


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    PDF MSC23236C/CL-XXBS20/PS20 152-Word 36-Bit MSC23236C/CL-xxBS20/DS20 72-pin MSC23236C/CL-xxBS20 DS20 msc23236c

    SIEMENS BST

    Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
    Text: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature


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    PDF 16-Bit 3164165AT 3165165AT 3166165AT fiE3Sb05 A712S SIEMENS BST siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35

    300mil-wide trays

    Abstract: Q67100-Q2156 Q67100-Q2157
    Text: SIEM EN S 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e -50 version 60 ns access tim e 104 ns cycle tim e (-60 version)


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    PDF 32-Bit 324025S/GS-50/-60 324025S/GS-50) 324025S/GS-60) ModufiE35bD5 L-SIM-72-12 B235b05 300mil-wide trays Q67100-Q2156 Q67100-Q2157

    Untitled

    Abstract: No abstract text available
    Text: ISSI’ IS 4 1 C 1 6 2 5 6 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION eISSI FEATURES • DECEMBER 1998 Th IS41C16256 is a262,14 4 x 16-bit high-performance CMOS Dynamic Random Access Memory. The IS41C16256 offers an accelerated cycle access called EDO Page Mode.


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    PDF IS41C16256 16-bit IS41C16256 32-bit IS41C16256-35KI IS41C 16256-35TI 400-mil

    gm71c4400b

    Abstract: No abstract text available
    Text: GM71C4400B/BL GoldStar 1,048,576 WORDS x 4 BIT GOLDSTAR ELECTRON CO., LTD. CMOS DYNAMIC RAM Description Features • • • • T h e G M 7 1 C 4 4 0 0 B /B L is t h e n e w g e n e r a t i o n d y ­ n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 4 G M 7 1 C 4 4 0 0 B /B L h a s r e a l iz e d


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    PDF GM71C4400B/BL GMM71C4100BR/BLR GM71C4400BT/BLT 031MIN gm71c4400b

    374C

    Abstract: No abstract text available
    Text: - PRELIMINARY - November 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B814405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304


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    PDF B814405C-60/-70 MB814405C 024-bits MB814405C-60 MB814405C-70 26-LEAD FPT-26P-M01) F26001S-3C-3 374C

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS PRELIMINARY Features • High-density 32-m egabit SRAM module • 32-bit Standard Footprint supports densities from 16K x 32 through 1M x 32 • High-speed SRAMs — Access tim e of 12 ns • Low active power — 8.36W m ax. at 12 ns • 72 pins


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    PDF 32-bit CYM1851 32-megabit CYM1851 P6-25C 72-Pin PZ-25C PM-35C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} ^ 9097250 TOSHIBA <DISCRETE/OPTO D E f TOTTBSO 00174Ö0 1 | 99D 17480 D T-W-Z7 TLP6 I IJ GaAs I RED & P H O T O - T H Y R I STOR The TOSHIBA TLP611J consists of a photo­ thyristor connected inverse parallel optically coupled to a gallium arsenide infrared emitt­


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    PDF TLP611J 200mA 5000Vrms E67349 TaS25Â -100H8 DT-4/-87

    Untitled

    Abstract: No abstract text available
    Text: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers


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    PDF HM5118160BI 1048576-word 16-bit ADE-203-580A 5118160B 576-w 16-bit. ns/70 ns/80

    UEI 20 SP 010

    Abstract: Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D
    Text: e l e k t r o m k - b a u e ì e m e n t e * W UKaÊÊi I Ä I L I I m V w •1 vît M •'4 n, ' I ill ■ DATEN BLATTSAMM LU NG elektronische bauelemente ?: V' I j| D A I Ï K B L A U S A MML ÜHG "E lektronische Bauelemente1' Ausgabe 1/89 14 : "Neue und weiterentwiekelte Bauelemente sowie ausgewählte Importbauelemente"


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    PDF 64-KBit-Sehreib--Iese-Speicher 086/11/B9 UEI 20 SP 010 Datenblattsammlung u82720 mikroelektronik datenblattsammlung VEB mikroelektronik UB8820M "halbleiterwerk frankfurt" UEI 15 SP 020 Aktive elektronische Bauelemente 1988 Teil 2 B4207D

    71C4400A

    Abstract: No abstract text available
    Text: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 71C4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The GM71C4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. GM71C4400A/AL has realized higher density, higher per­


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    PDF GQ03455 71C4400A/AL GM71C4400A/AL 300-mil 20-pin 400-mil 71C4400A

    7006C

    Abstract: TOA8
    Text: '- / Ú - FUJITSU S3E L TD 3 7 4 cl75b G D 0 3 3 S S D .2 3 ^ /7 TOb » F C A J June 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 2 6 0 A -70/-80/-10 CMOS 256K X 16 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 16 bit Fast Page Mode Dynamic RAM The Fujitsu MB814260A is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304


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    PDF MB814260A 16-bit 16-bits MB814260A-70/-80/-10 7006C TOA8

    Untitled

    Abstract: No abstract text available
    Text: HM51W16160A Series HM51W18160A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-217B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi HM51W16160A Series, HM51W18160A Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology for high performance


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    PDF HM51W16160A HM51W18160A 1048576-word 16-bit ADE-203-217B 576-word 16-bit.

    M8730

    Abstract: No abstract text available
    Text: IBM11 M8730C IBM11 M8730CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins) • 8Mx72 Dual Bank Fast Page Mode DIMM


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    PDF IBM11 M8730C M8730CB 8Mx72 110ns 130ns M8730

    M4720D

    Abstract: No abstract text available
    Text: 2 2 0 \. 0BE d 96/S pssjAay ;u 0 ujnoop sin; jo pu 04; ;e suoisjAOjd 04; o; p o iq n s j 0i|ijn|. s| 0sn P0/U0S0J sm 6|j iiv uo^EJodjoQ i/\ia © £ 0 " 2 0 9 t " t ' l-V S ^5 8 9 8 1 -8 891 SZI Y i\ Tt Ot 56 P 6 II 01 58 > |o e g ) I (lU O Jj) m ru a u


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    PDF SA14-4602-03 M4720D

    Untitled

    Abstract: No abstract text available
    Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • System Performance Benefits: • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module -Non buffered for increased performance -Reduced noise 35 V s s ^ c c P'ns


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    PDF IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8Mx64, 8Mx72 SA14-4624-04

    Untitled

    Abstract: No abstract text available
    Text: IBM 11 M8645H 8M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data • Performance:


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    PDF M8645H 8Mx64 104ns

    Untitled

    Abstract: No abstract text available
    Text: H B 56S872E S N -6B /7B /8B 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-611 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The HB56S872ESN belongs to 8 Byte DIMM (Dual In-line Memory M odule) fam ily, and has been


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    PDF 56S872E 608-word 72-bit 168-pin ADE-203-611 HB56S872ESN B56S872ESN 24C02)