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    IRL 80 A Search Results

    IRL 80 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL8273MCIRZ Renesas Electronics Corporation 80A Single Channel Digital PMBus Step-Down Power Module Visit Renesas Electronics Corporation
    ISL8273MCIRZ-T Renesas Electronics Corporation 80A Single Channel Digital PMBus Step-Down Power Module Visit Renesas Electronics Corporation
    ISL8273MDIRZ Renesas Electronics Corporation 80A Single Channel Digital PMBus Step-Down Power Module Visit Renesas Electronics Corporation
    ISL8273MAIRZ Renesas Electronics Corporation 80A Single Channel Digital PMBus Step-Down Power Module Visit Renesas Electronics Corporation
    ISL8273MAIRZ-T Renesas Electronics Corporation 80A Single Channel Digital PMBus Step-Down Power Module Visit Renesas Electronics Corporation
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    IRL 80 A Price and Stock

    ams OSRAM Group IRL-80A

    EMITTER IR 950NM 60MA RADIAL
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    DigiKey IRL-80A Bulk
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    Swivellink AFSB-661-AI-RL

    Cobot Accessories ADVANCED ILLUMINATION MOUNTING PLATE
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    Mouser Electronics AFSB-661-AI-RL
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    Swivellink SLM-661-AI-RL

    Cobot Accessories METRIC ADVANCED ILLUMINATION RING LIGHT MOUNTING PLATE
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    Mouser Electronics SLM-661-AI-RL
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    ITT Interconnect Solutions CIR00AL-18-10S-F80-VO

    Standard Circular Connector
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    Mouser Electronics CIR00AL-18-10S-F80-VO
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    Siemens IRL80A

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    Bristol Electronics IRL80A 494
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    Find more IRL 80 A price and stock on Findchips.com

    IRL 80 A Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRL 80 A Infineon Technologies IrED, Single, 950nm Wave Length Original PDF
    IRL 80A Infineon Technologies GaAIAs IRED, Long-Term Stability, Wide beam, Matches phototransistor LPT80A Original PDF
    IRL80A OSRAM GaAs-Infrarot-Sendediode GaAs Infrared Emitter Original PDF
    IRL80A OSRAM LED, GaAs Infrared Emitter Original PDF
    IRL80A OSRAM Infrared, UV, Visible Emitters, Optoelectronics, EMITTER IR 950NM CLR SIDELOOKER Original PDF
    IRL80A Siemens GaAs-Infrarot-Sendediode GaAs Infrared Emitter Original PDF

    IRL 80 A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GEO06391

    Abstract: OHFD1422 Q68000-A7852 IRL81
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 470 nm bis 1080 nm • Sidelooker im Kunststoffgehäuse • Hohe Empfindlichkeit • Passend zu IRED IRL 80 A, IRL 81 A


    Original     		PDF Q68000-A7852 OHF00345 GEO06391 GEO06391 OHFD1422 Q68000-A7852 IRL81

    OSRAM IR emitter IRL

    Abstract: GEOY6391 OHFD1422 Q68000-A7852
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 470 nm bis 1080 nm • Sidelooker im Kunststoffgehäuse • Hohe Empfindlichkeit • Passend zu IRED IRL 80 A, IRL 81 A


    Original     		PDF Q68000-A7852 OSRAM IR emitter IRL GEOY6391 OHFD1422 Q68000-A7852

    Fototransistor

    Abstract: GEOY6461 Q68000-A7851 IRL80A LPT80A diode Sr 203
    Text: GaAs-Infrarot-Sendediode GaAs Infrared Emitter IRL 80 A Wesentliche Merkmale • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse • Lange Lebensdauer Langzeitstabilität


    Original     		PDF GEOY6461 Fototransistor GEOY6461 Q68000-A7851 IRL80A LPT80A diode Sr 203

    fototransistor

    Abstract: LPT80A Q68000-A7851 fototransistor if
    Text: GaAs-Infrarot-Sendediode GaAs Infrared Emitter IRL 80 A Wesentliche Merkmale • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse • Lange Lebensdauer Langzeitstabilität


    Original     		PDF

    GEOY6461

    Abstract: Q68000-A7851 Infrared Emitting Diode Pink
    Text: GaAs-Infrarot-Sendediode GaAs Infrared Emitter IRL 80 A Wesentliche Merkmale Features • GaAs-Lumineszenzdiode im Infrarotbereich • Rosa Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse • Lange Lebensdauer Langzeitstabilität


    Original     		PDF Q68000-A7851 GEOY6461 Q68000-A7851 Infrared Emitting Diode Pink

    OHLY0598

    Abstract: No abstract text available
    Text: GaAs-Infrarot-Sendediode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 80 A Wesentliche Merkmale Features • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse


    Original     		PDF Q68000A7851 OHLY0598

    OHLY0598

    Abstract: No abstract text available
    Text: GaAs-Infrarot-Sendediode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 80 A Wesentliche Merkmale Features • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse


    Original     		PDF Q68000A7851 OHLY0598

    CECC 00802

    Abstract: IRL80A
    Text: GaAs-Infrarot-Sendediode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 80 A Wesentliche Merkmale Features • GaAs-Lumineszenzdiode im Infrarotbereich • Klares Miniaturkunststoffgehäuse, seitliche Abstrahlung • Preiswertes Kunststoffgehäuse


    Original     		PDF Q68000A7851 720-IRL80A CECC 00802 IRL80A

    Q62703Q1820

    Abstract: Q62703Q5195 20MS Q62702-Q1745
    Text: IR-LUMINESZENZDIODEN INFRARED EMITTERS 3. Emitter im Plastikgehäuse Package T 1¾ λpeak 3. Emitters in Plastic Package ϕ deg. Ie VF nm mW/sr V IRL 81 A 880 ± 25 ≥ 1.0 1.5 SFH 484 SFH 484-2 880 ±8 ≥ 50 ≥ 80 SFH 486 880 ± 11 SFH 485-2 880 SFH 487


    Original     		PDF Q68000-A8000 Q62703-Q1092 Q62703-Q1756 Q62703-Q1094 Q62703-Q1547 Q62703-Q1095 Q62703-Q2174 Q62702-P5524 Q62702-P5525 Q62702-P5526 Q62703Q1820 Q62703Q5195 20MS Q62702-Q1745

    OHF04132

    Abstract: IEC 62471 osram OS-PCN-2011-003-A IEC 61760-1
    Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant IRL 81 A gemäß OS-PCN-2011-003-A acc. to OS-PCN-2011-003-A Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung


    Original     		PDF OS-PCN-2011-003-A OS-PCN-2011-003-A OHF04132 IEC 62471 osram IEC 61760-1

    Untitled

    Abstract: No abstract text available
    Text: SDM-08060-B1F Product Description 869-894 MHz Class AB 65W Power Amplifier Module Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage.


    Original     		PDF SDM-08060-B1F SDM-08060-B1F EDS-104208 AN054,

    Untitled

    Abstract: No abstract text available
    Text: Product Description SDM-08060-B1F The SDM-08060-B1F 60W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a drop-in, no-tune solution for high power applications requiring high


    Original     		PDF SDM-08060-B1F SDM-08060-B1F Descript28V, 800mA 700mA 500mA 400mA 400mA 600mA

    60W POWER AMPLIFIER

    Abstract: SDM-08060-B1F dual gsm repeater IM750 IMDS
    Text: Product Description SDM-08060-B1F The SDM-08060-B1F 60W power module is an impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. It is a drop-in, no-tune solution for high power applications requiring high


    Original     		PDF SDM-08060-B1F SDM-08060-B1F 800mA 700mA 600mA 500mA 400mA EDS-104208 60W POWER AMPLIFIER dual gsm repeater IM750 IMDS

    GSM repeater circuit

    Abstract: LDMOS push pull SDM-08060-B1F
    Text: SDM-08060-B1F SDM-08060-B1FY Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high


    Original     		PDF SDM-08060-B1F SDM-08060-B1FY SDM-08060-B1F Bal45 EDS-104208 AN054, GSM repeater circuit LDMOS push pull

    electronique

    Abstract: data book electronique award award 1998
    Text: Xilinx Receives Three IRL Industry Awards be recognized with other winners at an award ceremony in October in Chicago during the National Communications Forum, a networking and The Xilinx IRL methodology combines computer net works, the Java programming language, and the new communications conferXilinx Virtex FPGAs, to create a new class of electronicence.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SDM-08060-B1F SDM-08060-B1FY Product Description Sirenza Microdevices’ SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high


    Original     		PDF SDM-08060-B1F SDM-08060-B1FY EDS-104208 AN054,

    fototransistor

    Abstract: fototransistor if Q68000-A8000 IRL81
    Text: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter IRL 81 A Wesentliche Merkmale • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Klares Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig • Lange Lebensdauer Langzeitstabilität


    Original     		PDF OHR01425 fototransistor fototransistor if Q68000-A8000 IRL81

    RF power amplifier MHz

    Abstract: SDM-09060
    Text: SDM-09060-B1F SDM-09060-B1FY Product Description Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power


    Original     		PDF SDM-09060-B1F SDM-09060-B1FY EDS-104211 AN054, RF power amplifier MHz SDM-09060

    Untitled

    Abstract: No abstract text available
    Text: SDM-09060-B1F Product Description 925-960 MHz Class AB 65W Power Amplifier Module Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The


    Original     		PDF SDM-09060-B1F SDM-09060-B1F EDS-104211 AN054,

    LDMOS push pull

    Abstract: SDM-09060-B1F RF power amplifier MHz
    Text: SDM-09060-B1F SDM-09060-B1FY Product Description Sirenza Microdevices’ SDM-09060-B1F 65W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power


    Original     		PDF SDM-09060-B1F SDM-09060-B1FY SDM-09060-B1F Gnd-45 EDS-104211 AN054, LDMOS push pull RF power amplifier MHz

    GEOY6461

    Abstract: OHLY0598
    Text: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig


    Original     		PDF

    OHLY0598

    Abstract: No abstract text available
    Text: GaAlAs-Infrarot-Sendediode GaAlAs-Infrared Emitter Lead Pb Free Product - RoHS Compliant IRL 81 A Wesentliche Merkmale Features • GaAIAs-Lumineszenzdiode im nahen Infrarotbereich • Rosa Kunststoff-Miniaturgehäuse, seitliche Abstrahlung • Preisgünstig


    Original     		PDF

    AN054

    Abstract: SDM-09120
    Text: SDM-09120 SDM-09120Y Product Description RoHS Compliant Pb & Green Package 925-960 MHz Class AB 130W Power Amplifier Module Sirenza Microdevices’ SDM-09120 130W power module is a robust impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The


    Original     		PDF SDM-09120 SDM-09120Y SDM-09120 AN054, EDS-103478 AN054

    photointerrupter

    Abstract: aot 430
    Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A 2.54 '2.03 r- cNj LO CO 1.70 1.45 GE006391 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified W esentliche Merkmale Features


    OCR Scan     		PDF GE006391 Q68000-A7852 photointerrupter aot 430