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    IRL 1540 N Search Results

    IRL 1540 N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PCV-0-154-05L Coilcraft Inc General Purpose Inductor, 150uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    PCV-0-154-03L Coilcraft Inc General Purpose Inductor, 150uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    77315-401-19LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Header, Through Hole, Single Row, 19 Positions 2.54 mm (0.100in) Pitch, Right Angle Visit Amphenol Communications Solutions
    77315-407-13LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Header, Through Hole, Single Row, 13 Positions 2.54mm (0.100in) Pitch, Right Angle Visit Amphenol Communications Solutions
    75915-404HLF Amphenol Communications Solutions Dubox® 2.54mm, Board to Board Connector,Vertical Receptacle, Through Hole, Single row , 4 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
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    IRL 1540 N Price and Stock

    International Rectifier IRLI540N

    23 A, 100 V, 0.053 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB (Also Known As: IRL1540N)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRLI540N 13
    • 1 $42
    • 10 $39.9
    • 100 $37.8
    • 1000 $37.8
    • 10000 $37.8
    Buy Now

    IRL 1540 N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IrL 1540 N

    Abstract: IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 SMA428A AN1784
    Text: AN1784 APPLICATION NOTE AN LNA OPTIMIZED AT 1575 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1575 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.45 dB Gain 18 dB RLin 6.7 dB Noise Figure


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    AN1784 SMA428A SMA428A IrL 1540 N IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 AN1784 PDF

    Untitled

    Abstract: No abstract text available
    Text: TriQuint €► Advance Product Information SEMICONDUCTOR« 17-21 GHz Intermediate Power Amplifier Key Features and Performance 0.25um pHEMT Technology TGA9088A-EPU Primary Applications Satellite Systems 17-21 GHz Frequency Range 22 dBm @ P2dB Nominal Pout


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    TGA9088A-EPU EG1901A TGA9088A) PDF

    IrL 1540 N

    Abstract: 1540MHz F1540 ATC100 UGF15030 Cree Microwave ZENER 26v 10UF 22UF
    Text: UGF15030 30W, 1435-1540 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 1435 to 1540 MHz. Rated with a minimum output power of 30W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


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    UGF15030 26VDC, 1540MHz, UGF15030F UGF15030 IrL 1540 N 1540MHz F1540 ATC100 Cree Microwave ZENER 26v 10UF 22UF PDF

    IrL 1540 N

    Abstract: IrL 1540 g AN1955 MRF8S18120HR3 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all


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    MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N IrL 1540 g AN1955 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H PDF

    IrL 1540 N

    Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for


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    MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all


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    MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 PDF

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    Abstract: No abstract text available
    Text: PGE 609 02 Erbium-Doped Fiber Amplifier for Analog Applications Key Features • Operating wavelength window: 1540-1560 nm • Saturation output power: +16 dBm • Low noise figure, typ.<5.0 dB • Input and output power monitors • High input and output return losses


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    RS-232) SE-164 1522-PGE PDF

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    Abstract: No abstract text available
    Text: PGE 609 05 Erbium-Doped Fiber Amplifier for Analog Applications Key Features • Operating wavelength window: 1540-1560 nm • Saturation output power: +19 dBm • Low noise figure, typ.<5.0 dB • Input and output power monitors • High input and output return losses


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    RS-232) SE-164 1522-PGE PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to


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    MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 PDF

    IrL 1540 N

    Abstract: wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to


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    MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IrL 1540 N wimax spectrum mask irl 1520 25VDD ATC100B470BT500XT A114 A115 AN1955 C101 JESD22 PDF

    IRL 1630

    Abstract: IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S16150H Rev. 0, 6/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S16150HR3 MRF7S16150HSR3 Designed for WiMAX base station applications with frequencies up to


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    MRF7S16150H MRF7S16150HR3 MRF7S16150HSR3 MRF7S16150HR3 IRL 1630 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF7S16150HSR3 MRF7S16150HR PDF

    Untitled

    Abstract: No abstract text available
    Text: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ 70 GHz Silicon Germanium TECHNOLOGY


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    SMA661AS OT666) OT666 SMA661AS 575GHz) PDF

    IrL 1540 N

    Abstract: SMA661AS SMA661ASTR SMA661
    Text: SMA661AS GPS HIGH GAIN LNA ICs PRELIMINARY DATA GENERAL FEATURES • LOW NOISE FIGURE 1.4 dB @ 1.575 GHz ■ HIGH GAIN 17 dB @ 1.575 GHz ■ POWER DOWN FUNCTION ■ TEMPERATURE COMPENSATED ■ UNCONDITIONALLY STABLE ■ INTEGRATED OUTPUT MATCHING ■ ESD PROTECTION ± 2kV HBM


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    SMA661AS OT666) OT666 SMA661AS 575GHz) IrL 1540 N SMA661ASTR SMA661 PDF

    178 09T

    Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


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    BD135) BD136) GX-0300-55-22, MRF15030 178 09T capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor PDF

    atx smps schematic diagram

    Abstract: 4330D IrL 1540 N ATX SMPS schematics MC33152 MOSFET IRL NCP4330 NCP4330DR2G TL431 ac-dc inverter applications
    Text: NCP4330 Post Regulation Driver The NCP4330 houses a dual MOSFET driver intended to be used as a companion chip in AC−DC or DC−DC multi−output post regulated power supplies. Being directly fed by the secondary AC signal, the device keeps power dissipation to the lowest while reducing the


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    NCP4330 NCP4330 NCP4330-based NCP4330/D atx smps schematic diagram 4330D IrL 1540 N ATX SMPS schematics MC33152 MOSFET IRL NCP4330DR2G TL431 ac-dc inverter applications PDF

    4330D

    Abstract: No abstract text available
    Text: NCP4330 Post Regulation Driver The NCP4330 houses a dual MOSFET driver intended to be used as a companion chip in AC−DC or DC−DC multi−output post regulated power supplies. Being directly fed by the secondary AC signal, the device keeps power dissipation to the lowest while reducing the


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    NCP4330 NCP4330 NCP4330â NCP4330/D 4330D PDF

    4330D

    Abstract: IrL 1540 N MC33152 NCP4330 NCP4330DR2G TL431 schematic SMPS set top box 30 volts
    Text: NCP4330 Post Regulation Driver The NCP4330 houses a dual MOSFET driver intended to be used as a companion chip in AC−DC or DC−DC multi−output post regulated power supplies. Being directly fed by the secondary AC signal, the device keeps power dissipation to the lowest while reducing the


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    NCP4330 NCP4330 NCP4330-based NCP4330/D 4330D IrL 1540 N MC33152 NCP4330DR2G TL431 schematic SMPS set top box 30 volts PDF

    CAPACITOR chip murata mtbf

    Abstract: BD136
    Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 22MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    MRF15090/D MRF15090 MRF15090 MRF15090/D CAPACITOR chip murata mtbf BD136 PDF

    capacitor mallory

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.


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    BD135) BD136) MRF15030 capacitor mallory RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf PDF

    CAPACITOR chip murata mtbf

    Abstract: MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf
    Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    MRF15090/D MRF15090 DEVICEMRF15090/D CAPACITOR chip murata mtbf MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf PDF

    BD136

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    MRF15090/D MRF15090 MRF15090 DEVICEMRF15090/D BD136 PDF

    CAPACITOR chip murata mtbf

    Abstract: IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3
    Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    MRF15090/D MRF15090 MRF15090/D* CAPACITOR chip murata mtbf IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    MRF15090/D MRF15090 DEVICEMRF15090/D PDF

    CAPACITOR chip murata mtbf

    Abstract: IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR
    Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM


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    MRF15090/D MRF15090 CAPACITOR chip murata mtbf IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR PDF