IRHN7230
Abstract: IRHN8230
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.822A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7230 IRHN8230 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 200 Volt, 0.40Ω International Rectifier’s MEGA RAD HARD technology
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IRHN7230
IRHN8230
IRHN7230
IRHN8230
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Untitled
Abstract: No abstract text available
Text: PD - 90822C IRHN7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7230 100K Rads (Si) IRHN3230 300K Rads (Si) IRHN4230 600K Rads (Si) IRHN8230 1000K Rads (Si)
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90822C
IRHN7230
IRHN3230
IRHN4230
IRHN8230
1000K
MIL-STD-750,
MlL-STD-750,
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f0114
Abstract: IRHN3230 IRHN4230 IRHN7230 IRHN8230
Text: PD - 90822C IRHN7230 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7230 100K Rads (Si) IRHN3230 300K Rads (Si) IRHN4230 600K Rads (Si) IRHN8230 1000K Rads (Si)
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90822C
IRHN7230
IRHN3230
IRHN4230
IRHN8230
1000K
MIL-STD-750,
MlL-STD-750,
f0114
IRHN3230
IRHN4230
IRHN7230
IRHN8230
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IRHM7230
Abstract: IRHM8230 IRHN7230 IRHN8230
Text: PD - 90822B IRHN7230 IRHN8230 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 200Volt, 0.40Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90822B
IRHN7230
IRHN8230
200Volt,
1x106
IRHM7230
IRHM8230
IRHN7230
IRHN8230
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IRHN7230
Abstract: IRHN8230
Text: Provisional Data Sheet No. PD-9.822A REPETITIVE AVALANCHE AND dv/dt RATED IRHN7230 IRHN8230 HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω, MEGA RAD HARD HEXFET 200 Volt, 0.40Ω International Rectifier’s MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation
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IRHN7230
IRHN8230
IRHN7230
IRHN8230
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.822A INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS _ o , IRHN7230 IRHN853Q N-CHANNEL MEGA RAD HARD 200 Volt, 0.40J2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHN7230
IRHN853Q
1x106
1x105
00nQ33
IRHN7230,
IRHN8230
D01RD34
H-310
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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JANSR2N7261
Abstract: No abstract text available
Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
JANSR2N7261
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N8230B
Abstract: H309 N8230
Text: Data Sheet No. PD-9.822A INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7230 IRHN8S30 N-CHANNEL s MEGA RAD HARD 200 Volt, 0.40Q, MEGA RAD HARD HEXFET International Rectifier’s M EGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHN7230
IRHN8S30
1x105
1x106
H-309
IRHN7230,
IRHN8230
102l---------------------------------50
H-310
N8230B
H309
N8230
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Untitled
Abstract: No abstract text available
Text: Government and Space Products International IO R Rectifier • d Part Number Tc=2S°C RDS on b VD$S (A) (V) T f=100°C (A) Total Dose Rating Rads (Si) p @ Ic = 25°C (W) HEXFET ® Power MOSFETs Fax Case on Demand Outline Key Number R a d ia tio n H a rd e n e d
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IRHN7054
IRHN7130
RHN7I50
IRHN7230
RHN7250
IRHN7450
IRHN8054
N8I30
RHN8I50
IRHN8230
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IRHE7110
Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Text: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0
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4flss452
IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN80S4
IRHN7130
1RHF8130
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Untitled
Abstract: No abstract text available
Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHE9230
IRHN7054
IRHN8054
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