IRGPH30MD2
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH30MD2
10kHz)
O-247AC
C-478
IRGPH30MD2
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IRGPH30MD2
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V
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IRGPH30MD2
10kHz)
O-247AC
C-478
IRGPH30MD2
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C478
Abstract: igbt socket IRGPH30MD2 irgph30
Text: Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH30MD2
10kHz)
O-247AC
C-478
C478
igbt socket
IRGPH30MD2
irgph30
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IRGKI200F06
Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U
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IRGB420U
IRGP420U
IRGB430U
IRGP430U
IRGBC20K
IRGPC20K
IRGBC20K-S
IRGBC20M
IRGBC20M-S
IRGPC20M
IRGKI200F06
IRGNIN150M06
IRGKI120F06
IRGDDN600M06
IRGKI115U06
IRGBC20FD2
IRGTIN025M12
IRGTI140U06
IRGPC50U
IRGKI165F06
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igbt 400V 20A
Abstract: IRG4PH30KD IRGPH30MD2
Text: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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1579A
IRG4PH30KD
char20
igbt 400V 20A
IRG4PH30KD
IRGPH30MD2
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IRGKI165F06
Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)
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OT-23)
IRLML2402*
IRLML2803
IRLML5103
IRLML6302*
IRGKI165F06
IRGDDN600M06
IRGDDN600K06
IRF7311
IRGNIN075
IRFK6H054
IRF7601
IRLI2203N
IRLML2803
IRLML5103
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TRANSISTOR 9642
Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
IRG4BC20F
IRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
TRANSISTOR 9642
9544 transistor
T0247 package
what is fast IGBT transistor
IRG4PC50U
Equivalent transistors for IRG4PC50U
IRG4BC20FD 600V 16 TO220
IRGPC40U
irg4ph50ud
IRGB440U
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IRGKI200F06
Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications
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O-220AB
IRG4BC40S
IRGBC20S
IRGBC30S
IRGBC40S
O-247AC
IRG4PC40S
IRGPC30S
IRGPC40S
10-30kHz)
IRGKI200F06
IRGNIN150M06
IRGTI165F06
IRGBC20FD2
IRGKI115U06
irgti140u06
IRG4PC40S
IRGPH40FD2
IRG4BC30UD
IRGNI115U06
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Untitled
Abstract: No abstract text available
Text: PD -91580A IRG4PH30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed
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-91580A
IRG4PH30K
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9544 transistor
Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics
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T0247
T0220
assIRG4BC20FD
IRG4BC30F
IRG4BC30FD
IRG4BC40F
IRG4BC20U
IRG4BC20UD
IRG4BC30U
IRG4BC30UD
9544 transistor
TRANSISTOR 9642
IRG4PC50U
irg4ph50ud
igbt failure
IRG4PC40UD2
HTGB
IRGPH60UD2
IRGBC20FD
rectifier IGBT
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Untitled
Abstract: No abstract text available
Text: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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1579A
IRG4PH30KD
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1000V diod
Abstract: irgph30k IRG4PH30K br a55 IRGPH30M
Text: PD -9.1580 IRG4PH30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4PH30K
1000V diod
irgph30k
IRG4PH30K
br a55
IRGPH30M
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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IRGPH30K
Abstract: IRG4PH30K
Text: PD -91580A IRG4PH30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed
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-91580A
IRG4PH30K
p252-7105
IRGPH30K
IRG4PH30K
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IRG4PH30KD
Abstract: IRGPH30MD2 ultra-FAST Diode 800v 5A
Text: PD- 9.1579 IRG4PH30KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
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IRG4PH30KD
IRG4PH30KD
IRGPH30MD2
ultra-FAST Diode 800v 5A
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IRG4PH30K
Abstract: irgph30k
Text: PD -91580A IRG4PH30K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed
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-91580A
IRG4PH30K
IRG4PH30K
irgph30k
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IRG4PH30KD
Abstract: IRGPH30MD2
Text: PD- 91579A IRG4PH30KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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1579A
IRG4PH30KD
char52-7105
IRG4PH30KD
IRGPH30MD2
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1115 International lü R e c tifie r IRGPH30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V Ces = 1200V • Short circuit rated - 1 0 m s @125°C, Vge = 15V
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IRGPH30MD2
10kHz)
00A/ps
O-247AC
C-478
002D2bfl
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1115 bitemational |or]Rectifier IRGPH30MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V Ces = 1200V Short circuit rated -1 Ops @125°C, VGE = 15V
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OCR Scan
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IRGPH30MD2
10kHz)
00A/ps
O-247AC
C-478
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IRGPH30M
Abstract: No abstract text available
Text: In te rn a tio n a l S U F te c tifie r IGBTs Fast IGBTs for Medium Frequency 3-10 kHz range Power Applications Short-Circuit Rated - Optimized for Motor Control Applications FAST (cont.) 'c Part Number Continuous Collector Current VCES Collector to Emitter
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IRGDDN300M06
IRGDDN400M06
IRGDDN600M06
IRGRDN300M06
IRGRDN400M06
IRGPH30MD2
IRGPH40MD2
IRGPH50MD2
T0-247AC
IRGKIN025M12
IRGPH30M
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irgph30k
Abstract: IRGPH30M irgph30
Text: International lO R Rectifier PD -9 .1 5 8 0 IRG4PH30K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR F e a tu re s a • High short circuit rating optimized for motor control, tsc = 10|J.s, V cc = 720V , T j = 125°C, VGE= 15V
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IRG4PH30K
irgph30k
IRGPH30M
irgph30
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IRGDDN600M06
Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
Text: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current
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IRGBF20F
IRGPF20F
IRGB420U
IRGP420U
IRGBC20K
RGPC20K
IRGBC20M
IRGPC20M
IRGBC20U
IRGPC20U
IRGDDN600M06
IRGPH20K
IRGPC20F
IRGPF30F
irgpc50md2
*gBC20f
IRGPC50U
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10A600V
Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU
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HGIP12NB0B3
115J101
IXGP10N60A
IXGH10N60A
HGTP20N6QB3
GT25JT01
IXGH20N6QA
IXGH24N6QA
IXGH40N60A
IXGH50N6
10A600V
1XGH20N60AU1
IGBT cross reference
IXSH20N60AU1
20a600v
12A600V
CT60AM-20
5N60RUFD
5A1200V
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ir igbt 1200V 10A
Abstract: DIODE JS 8 IRGPH30MD2 diode 5mm IRG4PH30KD IRGPH30M
Text: International I R Rectifier PD- 9.1579 IRG4PH30KD PRELIM IN ARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10|js, V Cc = 720V , T j = 125°C,
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IRG4PH30KD
IRGPH30Millimeters
ir igbt 1200V 10A
DIODE JS 8
IRGPH30MD2
diode 5mm
IRG4PH30KD
IRGPH30M
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