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    IRGC Search Results

    IRGC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL9000IRGCZ Renesas Electronics Corporation Dual LDO with Low Noise, Very High PSRR, and Low IQ, DFN, /Tube Visit Renesas Electronics Corporation
    ISL9012IRGCZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9011AIRGCZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR Visit Renesas Electronics Corporation
    ISL9014AIRGCZ Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR, DFN, /Tube Visit Renesas Electronics Corporation
    ISL9014IRGCZ-T Renesas Electronics Corporation Dual LDO with Low Noise, Low IQ, and High PSRR, DFN, /Reel Visit Renesas Electronics Corporation
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    IRGC Price and Stock

    Texas Instruments MSP430F5326IRGCR

    IC MCU 16BIT 96KB FLASH 64VQFN
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    DigiKey MSP430F5326IRGCR Cut Tape 2,000 1
    • 1 $6.44
    • 10 $4.951
    • 100 $4.1686
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    MSP430F5326IRGCR Reel 2,000 2,000
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    MSP430F5326IRGCR Digi-Reel 2,000 1
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    Bristol Electronics MSP430F5326IRGCR 47 1
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    Win Source Electronics MSP430F5326IRGCR 6,100
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    Texas Instruments MSP430F5324IRGCT

    IC MCU 16BIT 64KB FLASH 64VQFN
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    DigiKey MSP430F5324IRGCT Digi-Reel 980 1
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    MSP430F5324IRGCT Cut Tape 980 1
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    MSP430F5324IRGCT Reel 750 250
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    Win Source Electronics MSP430F5324IRGCT 2,011
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    • 100 $4.5592
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    Texas Instruments ADS5281IRGCT

    IC ADC 12BIT PIPELINED 64VQFN
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    DigiKey ADS5281IRGCT Digi-Reel 441 1
    • 1 $117.5
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    ADS5281IRGCT Cut Tape 441 1
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    ADS5281IRGCT Reel 250 250
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    Texas Instruments ADS62P49IRGCT

    IC ADC 14BIT PIPELINED 64VQFN
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    DigiKey ADS62P49IRGCT Cut Tape 287 1
    • 1 $304.61
    • 10 $262.57
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    ADS62P49IRGCT Digi-Reel 287 1
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    Bristol Electronics ADS62P49IRGCT 3
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    Rochester Electronics ADS62P49IRGCT 231 1
    • 1 $246.32
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    Win Source Electronics ADS62P49IRGCT 830
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    Texas Instruments TUSB8044AIRGCR

    IC INTERFACE MISC
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    DigiKey TUSB8044AIRGCR Digi-Reel 270 1
    • 1 $9.67
    • 10 $7.535
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    TUSB8044AIRGCR Cut Tape 270 1
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    Ameya Holding Limited TUSB8044AIRGCR 21,176
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    Win Source Electronics TUSB8044AIRGCR 1,000
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    IRGC Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGC100B120K International Rectifier IGBT Original PDF
    IRGC100B120KB International Rectifier IGBT Original PDF
    IRGC100B120U International Rectifier IGBT Original PDF
    IRGC100B120UB International Rectifier IGBT Original PDF
    IRGC100B120UB International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Scan PDF
    IRGC10B60KB International Rectifier Die in Wafer Form Original PDF
    IRGC14C40LB International Rectifier Die in Wafer Form Original PDF
    IRGC14C40LC International Rectifier Die in Wafer Form Original PDF
    IRGC14C40LD International Rectifier Die in Wafer Form Original PDF
    IRGC15B120KB International Rectifier IGBT Original PDF
    IRGC15B120UB International Rectifier IGBT Original PDF
    IRGC15B120UB International Rectifier IGBT Original PDF
    IRGC15B60KB International Rectifier Die in Wafer Form Original PDF
    IRGC20B60KB International Rectifier Die in Wafer Form Original PDF
    IRGC25B120KB International Rectifier IGBT Original PDF
    IRGC25B120KB International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Scan PDF
    IRGC25B120UB International Rectifier IGBT Original PDF
    IRGC30B60KB International Rectifier Die in Wafer Form Original PDF
    IRGC4056B Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF
    IRGC4059B Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT CHIP WAFER Original PDF

    IRGC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRGC25B120KB

    Abstract: 1kA IGBT
    Text: PD - 93868 IRGC25B120KB Die in Wafer Form Features • • • • • 1200V IC nom =25A VCE(on) typ.=2.28V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		IRGC25B120KB 150mm Thresh57] IRGC25B120KB 1kA IGBT PDF

    IRGC4066

    Abstract: IRGP4066 IRGP4066-E
    Text: PD - 97632 IRGC4066B Features • Low VCE on Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • Short Circuit Rated • Square RBSOA • Positive VCE (on) Temperature Coefficient • Tight Parameter Distribution


    Original     		IRGC4066B IRGC4066 IRGP4066 IRGP4066-E PDF

    IRGC100B120KB

    Abstract: 4kA IGBT
    Text: PD - 93874 IRGC100B120KB Die in Wafer Form Features • • • • • 1200V IC nom = 100A VCE(on) typ.= 2.2V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		IRGC100B120KB 150mm IRGC100B120KB 4kA IGBT PDF

    igbt 20A 1200v

    Abstract: IRGCH20SE IRGPH20S
    Text: PD-9.1440 TARGET IRGCH20SE IRGCH20SE IGBT Die in Wafer Form C 1200 V Size 2 Standard Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		IRGCH20SE IRGCH20SE IRGPH20S igbt 20A 1200v IRGPH20S PDF

    IRGBC30F

    Abstract: IRGCC30FE
    Text: PD-9.1430 TARGET IRGCC30FE IRGCC30FE IGBT Die in Wafer Form C 600 V Size 3 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		IRGCC30FE IRGCC30FE IRGBC30F IRGBC30F PDF

    IRGPH50K

    Abstract: igbt 20A 1200v IRGCH50KE
    Text: PD-9.1439 TARGET IRGCH50KE IRGCH50KE IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		IRGCH50KE IRGCH50KE IRGPH50K IRGPH50K igbt 20A 1200v PDF

    300C

    Abstract: IRGC8B120UB
    Text: PD -94317 IRGC8B120UB IRGC8B120UB IGBT Die in Wafer Form Features • • • • • GEN5 Non Punch Through NPT Technology UltraFast 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient 1200 V IC(nom) = 8A VCE(on) typ. = 3.63V @


    Original     		IRGC8B120UB IRGC8B120UB 150mm 20KHz Satur300C 300C PDF

    IRGCH50FE

    Abstract: IRGPH50F
    Text: Previous Datasheet Index Next Data Sheet PD-9.1421 TARGET IRGCH50FE IRGCH50FE IGBT Die in Wafer Form C 1200 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


    Original     		IRGCH50FE IRGCH50FE IRGPH50F IRGPH50F PDF

    igbt 20A 1200v

    Abstract: IRGCH40SE IRGPH40S 1200v 20a IGBT
    Text: Previous Datasheet Index Next Data Sheet PD-9.1442 TARGET IRGCH40SE IRGCH40SE IGBT Die in Wafer Form C 1200 V Size 4 Standard Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


    Original     		IRGCH40SE IRGCH40SE IRGPH40S igbt 20A 1200v IRGPH40S 1200v 20a IGBT PDF

    IRGCC40KE

    Abstract: IRGPC40K
    Text: Previous Datasheet Index Next Data Sheet PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


    Original     		IRGCC40KE IRGCC40KE IRGPC40K IRGPC40K PDF

    IRGCH40KE

    Abstract: IRGPH40K
    Text: Previous Datasheet Index Next Data Sheet PD-9.1422 TARGET IRGCH40KE IRGCH40KE IGBT Die in Wafer Form C 1200 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


    Original     		IRGCH40KE IRGCH40KE IRGPH40K IRGPH40K PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96295 IRGC2B60KB Die in Wafer Form Features • • • • • C Non Punch Through NPT Technology Low VCE(on) 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient G Benefits • • • • E Benchmark Efficiency for Motor Control Applications


    Original     		IRGC2B60KB 150mm PDF

    igbt 20A 1200v

    Abstract: IRGCH50SE IRGPH50S
    Text: PD-9.1443 TARGET IRGCH50SE IRGCH50SE IGBT Die in Wafer Form C 1200 V Size 5 Standard Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		IRGCH50SE IRGCH50SE IRGPH50S igbt 20A 1200v IRGPH50S PDF

    IRGCC40KE

    Abstract: IRGPC40K
    Text: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		IRGCC40KE IRGCC40KE IRGPC40K IRGPC40K PDF

    IRGCC50ME

    Abstract: IRGPC50M
    Text: PD-9.1423 TARGET IRGCC50ME IRGCC50ME IGBT Die in Wafer Form C 600 V Size 5 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		IRGCC50ME IRGCC50ME IRGPC50M IRGPC50M PDF

    91428

    Abstract: IRGCC40FE IRGPC40F IRGCC40F
    Text: PD-9.1428 TARGET IRGCC40FE IRGCC40FE IGBT Die in Wafer Form C 600 V Size 4 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


    Original     		IRGCC40FE IRGCC40FE IRGPC40F 91428 IRGPC40F IRGCC40F PDF

    IRGPS60B120KD

    Abstract: IRGC49B120KB
    Text: PD - 94353 IRGC49B120KB Die in Wafer Form Features • • • • • G Benefits • • • • 1200V IC nom = 50A VCE(on) typ.=2.33V @ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on)


    Original     		IRGC49B120KB 150mm IRGPS60B120KD Saturatio47 IRGPS60B120KD IRGC49B120KB PDF

    Untitled

    Abstract: No abstract text available
    Text: HF72D120ACE Hexfred Die in Wafer Form Fig.1 - Typical Diode Recovery 100 120 100 -100 80 Voltage -200 60 -300 40 -400 20 -500 -600 Current A Voltage (V) VCC=600V; Rg=5Ω; TJ=125°C; L=200µH; Driver=IRGC100B120KB -20 Current -700 -40 -800 -0.50 0.00 0.50


    Original     		HF72D120ACE IRGC100B120KB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94565 IRGC48B120KB Die in Wafer Form Features • • • • • GEN5 Non Punch Through NPT Technology Low VCE(on) 10µs Short Circuit Capability Square RBSOA Positive VCE(on) Temperature Coefficient Benefits • • • • 1200V IC(nom)= 50A VCE(on) typ.=2.45V @


    Original     		IRGC48B120KB 150mm GB50XF120K PDF

    SK 5207

    Abstract: No abstract text available
    Text: PD - 94562 IRGC16B120KB Die in Wafer Form Features • • • • • 1200V IC nom =15A VCE(on) typ.=2.55V@ IC(nom) @ 25°C Motor Control IGBT Short Circuit Rated 150mm Wafer C GEN5 Non Punch Through (NPT) Technology Low VCE(on) 10µs Short Circuit Capability


    Original     		IRGC16B120KB 150mm GB15RF120K SK 5207 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter


    OCR Scan     		IRGCH50FE IRGCH50FE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.


    OCR Scan     		IRGCH50SE IRGCH50SE 250pA, 250pA PDF

    IRGC25B120KB

    Abstract: international rectifier 5125
    Text: PD - 93868 IRGC25B120KB In te rn a tio n a l R ectifier Die in Wafer Form Features S • 10ps S hort C ircuit Capability • S quare R B S O A • Positive V C E(on 1200V S c • G E N 5 Non Punch T hrough (NPT) T echn ology • Low V CE(onj Tem perature Coefficient


    OCR Scan     		IRGC25B120KB 150mm 270TOLERANCE IRGC25B120KB international rectifier 5125 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V


    OCR Scan     		IRGCC30UE 250pA, 250pA PDF