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    IRGCH50KE Search Results

    IRGCH50KE Datasheets (1)

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    IRGCH50KE International Rectifier IGBT Original PDF

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    IRGPH50K

    Abstract: igbt 20A 1200v IRGCH50KE
    Text: PD-9.1439 TARGET IRGCH50KE IRGCH50KE IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage


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    PDF IRGCH50KE IRGCH50KE IRGPH50K IRGPH50K igbt 20A 1200v

    IRGPH50K

    Abstract: IRGCH50KE
    Text: Previous Datasheet Index Next Data Sheet PD-9.1439 TARGET IRGCH50KE IRGCH50KE IGBT Die in Wafer Form C 1200 V Size 5 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


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    PDF IRGCH50KE IRGCH50KE IRGPH50K IRGPH50K

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    Abstract: No abstract text available
    Text: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.


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    PDF IRGCH50KE IRGCH50KE 250pA, 250pA