IRGKI165F06
Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)
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OT-23)
IRLML2402*
IRLML2803
IRLML5103
IRLML6302*
IRGKI165F06
IRGDDN600M06
IRGDDN600K06
IRF7311
IRGNIN075
IRFK6H054
IRF7601
IRLI2203N
IRLML2803
IRLML5103
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IRGCH40KE
Abstract: IRGPH40K
Text: Previous Datasheet Index Next Data Sheet PD-9.1422 TARGET IRGCH40KE IRGCH40KE IGBT Die in Wafer Form C 1200 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage
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IRGCH40KE
IRGCH40KE
IRGPH40K
IRGPH40K
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IRGKI200F06
Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications
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O-220AB
IRG4BC40S
IRGBC20S
IRGBC30S
IRGBC40S
O-247AC
IRG4PC40S
IRGPC30S
IRGPC40S
10-30kHz)
IRGKI200F06
IRGNIN150M06
IRGTI165F06
IRGBC20FD2
IRGKI115U06
irgti140u06
IRG4PC40S
IRGPH40FD2
IRG4BC30UD
IRGNI115U06
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IRG4PH40K
Abstract: IRGPH40K IRGPH40M
Text: PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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IRG4PH40K
IRG4PH40K
IRGPH40K
IRGPH40M
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Untitled
Abstract: No abstract text available
Text: PD- 91577B IRG4PH40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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91577B
IRG4PH40KD
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Untitled
Abstract: No abstract text available
Text: PD - 91578B IRG4PH40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed
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91578B
IRG4PH40K
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irgph40md-2
Abstract: IRG4PH40KD IRGPH40KD2 IRGPH40MD2 MJ 14 x 1,5 - 4
Text: PD- 91577B IRG4PH40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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91577B
IRG4PH40KD
char52-7105
irgph40md-2
IRG4PH40KD
IRGPH40KD2
IRGPH40MD2
MJ 14 x 1,5 - 4
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IRG4PH40KD
Abstract: IRGPH40KD2 IRGPH40MD2 9936 n-ch
Text: PD- 91577B IRG4PH40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high
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91577B
IRG4PH40KD
char20
IRG4PH40KD
IRGPH40KD2
IRGPH40MD2
9936 n-ch
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IRFBE30 equivalent
Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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May-97
Sep-95
Sep-94
IRFBE30 equivalent
irf9640 REPLACEMENT GUIDE
IRGKI200F06
IRGP440U replacement
IRF3205 smd
IRGBC20FD2
IRFK3D450
IRFBg30 equivalent
IRGNIN150M06
irc540
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IC OZ 9936
Abstract: IRG4PH40K IRGPH40K IRGPH40M
Text: PD - 91578B IRG4PH40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed
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91578B
IRG4PH40K
IC OZ 9936
IRG4PH40K
IRGPH40K
IRGPH40M
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IRG4PH40KD
Abstract: IRGPH40KD2 IRGPH40MD2
Text: PD- 9.1577A IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • High short circuit rating optimized for motor control, tsc =10µs, V CC = 720V , TJ = 125°C, VGE = 15V
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IRG4PH40KD
IRG4PH40KD
IRGPH40KD2
IRGPH40MD2
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IC OZ 9936
Abstract: ir igbt 1200V 10A IRG4PH40K IRGPH40K IRGPH40M
Text: PD - 91578B IRG4PH40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed
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91578B
IRG4PH40K
IC OZ 9936
ir igbt 1200V 10A
IRG4PH40K
IRGPH40K
IRGPH40M
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IRGCH40KE
Abstract: IRGPH40K
Text: PD-9.1422 TARGET IRGCH40KE IRGCH40KE IGBT Die in Wafer Form C 1200 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage
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IRGCH40KE
IRGCH40KE
IRGPH40K
IRGPH40K
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IRGPH40KD2
Abstract: CEE 16a INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
Text: P D - 9.1250 International I IR e c t i f i e r IRGPH40KD2 Provisional Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F e a tu re s • S h o rt circu it - 1 0 |js @ 125°C , V GE = 10V V c e s = 1200V
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IRGPH40KD2
O-247AC
O-247AD)
IRGPH40KD2
CEE 16a
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
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Untitled
Abstract: No abstract text available
Text: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,
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IRG4PH40KD
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IRGPH40KD2
Abstract: IRGPH20K irgph30k
Text: HIRectifier IGBTs International UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency— Optim ized for Pow er Conversion Part Number V CES Collector to Emitter Voltage M a x V CE(on) Collector to Emitter Saturation Voltage
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IRGBC20K
IRGBC30K
IRGBC40K
IRGPC20K
IRGPC30K
IRGPC40K
IRGPC50K
O-220AB
IRGBC20KD
IRGNIN050K06
IRGPH40KD2
IRGPH20K
irgph30k
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier PD- 9.1577 IRG4PH40KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tBC=10[is, @720V VCE start , T j= 1 2 5 ° C , V g e =15V
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IRG4PH40KD
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Untitled
Abstract: No abstract text available
Text: International IG R Rectifier P D - 9 .1 5 7 7 A IRG4PH40KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tBC=10[is, Vcc = 720V , Tj = 125°C, V g e =15V • Combines low conduction losses with high
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IRG4PH40KD
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WE VQE 24 E
Abstract: WE VQE 11 E WE VQE 24
Text: International IGR Rectifier PD - 9.1578 IRG4PH40K PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSUIATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tgc =10 js, 0 36 0V VCE (start , T j = 125°C, VSE = 15V
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IRG4PH40K
WE VQE 24 E
WE VQE 11 E
WE VQE 24
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Untitled
Abstract: No abstract text available
Text: 2 International I R Rectifier PD - 9.1578A IRG4PH40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, t*. =10ps, VCC = 720V , T j = 125°C, VGe =15V • Combines low conduction losses with high
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IRG4PH40K
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.
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P-942
IRGCH40KE
IRGCH40KE
250pA,
250pA
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IRGPH40KD2
Abstract: IRGPC30KD2
Text: I n t e r n a t io n a l R e c t if ie r IGBTs I Insulated Gate Bipolar Transistors VCES Colador to EmitlarVoltaga Volt. Pm ULTRA-FAST M»x VcEfon) Colador to EmitterVohag* (Vota) ICContinuom Colador Current Tc*25*C Tc=KKCC (Ampt) (Ampi) Pq Mu Dissipation
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IRGBC20K
IRGBC30K
IRGBC40K
IRGBC20K-S
IRGBC40K-S
IRGPC30K
IRGPC40K
IRGPC50K
IRGPC60K
30kHz)
IRGPH40KD2
IRGPC30KD2
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IRGDDN600M06
Abstract: IRGPH20K IRGPC20F IRGPF30F irgpc50md2 *gBC20f IRGPC50U
Text: Insulated Gate BiPolar Transistors — IGBTs and IGBT / UltraFasf Diodes — CoPack Discrete and Module Types 1. 1 0- - 0 Q i w r r Chopper Low Side Switch Single switch witn uiooej Single Switch (without Diode o Current
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IRGBF20F
IRGPF20F
IRGB420U
IRGP420U
IRGBC20K
RGPC20K
IRGBC20M
IRGPC20M
IRGBC20U
IRGPC20U
IRGDDN600M06
IRGPH20K
IRGPC20F
IRGPF30F
irgpc50md2
*gBC20f
IRGPC50U
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ph40k
Abstract: No abstract text available
Text: International I«R Rectifier PD - 9 .1 5 7 8A IRG4 PH4 0 K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLARTRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10[J.S, Vcc = 720V , T j = 125°C, Vg e = 1 5 V
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